Dai Nippon Printing Co., Ltd.

Miyuki Suzuki

Takamasa Takano

Hiroshi Kudo

Shinji Maekawa

Yuki Aritsuka

Masaya Tanaka

Shuji Sagara

Shohei Yamada

Yumi Yoshii

A through electrode substrate according to an embodiment of the present disclosure includes a substrate having a first surface, a second surface, and a through-hole that penetrates between the first surface and the second surface and a through electrode disposed inside of the through-hole. The through electrode includes a first portion that closes part of the through-hole adjacent to the first surface and a second portion disposed along the internal surface of the through-hole. The thinnest part of the first portion in a direction perpendicular to the first surface has a thickness of A, the thinnest part of the second portion has a thickness of B, and the diameter of the through-hole on the first surface has a length of C. The relationship A<C<A+B×2 is satisfied.

Through electrode substrate, electronic unit, method for manufacturing through electrode substrate, and method for manufacturing electronic unit

A wiring substrate of the present disclosure includes a substrate, a first conductive layer, a first insulating layer, and a second conductive layer. The substrate has an insulating surface. The first conductive layer is disposed on the substrate and includes a first part and a second part. The first part has a first thickness. The second part has a second thickness thinner than the first thickness and is adjacent to the first part. The first insulating layer is disposed on the first part and apart from the second part. The first insulating layer is disposed between the second conducting layer and the first part.

Wiring substrate and semiconductor device

To provide a through hole electrode substrate and a semiconductor device which uses the through hole electrode substrate which have improved electrical properties in a conductive part which passes through the front and back of a substrate, a through hole electrode substrateof the invention comprises a substratehaving a through holewhich passes through the front and back of the substrate, and a conductive partincluding a metal material which is filled into the through hole, the conductive partincluding at least a metal material having an area weighted average crystal grain diameter of 13 &#x3bc;m or more. The conduction partalso includes a metal material having a crystal grain diameter of 29 &#x3bc;m or more. Further one end of the conductive part includes at least a metal material having an area weighted average crystal grain diameter of less than 13 &#x3bc;m, and the other end of the conductive part includes at least a metal material having an area weighted average crystal grain diameter of 13 &#x3bc;m or more.

Through hole electrode substrate with different area weighted average crystal grain diameter of metal in the conductive part and semiconductor device using the through hole electrode substrate

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Tokyo, Japan

Miyuki Suzuki