Japan Display Inc.

Toshiba Matsushita Display Technology Co., Ltd.

Miyuki Ishikawa

Hirotaka Hayashi

Masahiro Tada

Takashi Nakamura

Yutaka Umeda

Yoshiro Aoki

Makoto Shibusawa

Masahiro Yoshida

Takayuki Imai

Masayoshi Fuchi

Takashi Okada

Hajime Watakabe

Satoru Tomita

Arichika Ishida

Yasuo Saruhashi

Takahiko Endo

Hideyuki Takahashi

Yoshihiro Aoki

Takanori Tsunashima

Masashi Tsubuku

Keiichi Saito

Yasuharu Tanaka

Toshinori Kanuma

Hideaki Mori

According to one embodiment, a lateral-electric-field liquid crystal display device includes a light-emitting display layer including OLEDs and a driving circuit controlling light emission of the OLEDs, a moisture impermeable film provided to be laminated on the light-emitting display layer to prevent infiltration of moisture into the light-emitting display layer, an optical substrate provided separately from the moisture impermeable film and subjecting light from the light-emitting display region to optical processing, a first touch electrode group serving as one electrode group of touch electrodes and provided on a back surface of the optical substrate, and an extraction electrode group formed to be laminated on the moisture impermeable film, the extraction electrode group and the optical substrate have an overlapping part in plan view, and electrodes of the first touch electrode group being electrically connected to electrodes of the extraction electrode group in the overlapping part.

Display device

One embodiment of the invention is characterized as follows. A display device comprising: a display area including a plurality of pixels, each of the pixels has a first TFT and a second TFT, the first TFT and the second TFT comprise an oxide semiconductor, the first TFT and the second TFT are covered by an interlayer insulating film, a first through hole is formed in the in the interlayer insulating film to connect a drain of the first TFT, wherein a distance d1 between a center of the first through hole and an edge of a channel of the first TFT is shorter than a distance d2 between a center of the first through hole and an edge of a channel of the second TFT, a channel length of the first TFT is shorter than a channel length of the second TFT.

Display device and manufacturing method thereof

According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

Semiconductor device

Transistor with source and drain electrodes connected to an underlying light shielding layer

According to one embodiment, a display device includes a display panel having a counter substrate, an array substrate and a liquid crystal layer held therebetween, a counter electrode provided on the counter substrate, a pixel electrode arranged on the array substrate in a matrix, a sensor circuit arranged between rows of the plurality of pixel electrodes and configured to read out intensity of capacitive coupling between the sensor circuit and a dielectric, and a counter electrode drive circuit configured to pulsatively drive a common voltage added to the counter electrode during a period of driving the sensor circuit, wherein the sensor circuit comprises a detection electrode configured to form capacitance between the sensor circuit and the dielectric and to form capacitance between the sensor circuit and the counter electrode, and wherein the counter electrode comprises an aperture including at least a portion opposed to the detection electrode.

Growing community of inventors

Tokyo, Japan

Miyuki Ishikawa