Samsung Electronics Co., Ltd.

Miyoun Kim

Sungil Moon

Yongmin Kim

Sunkak Jo

Jongsu Park

Moonjong Kang

Heonju Lee

According to example embodiments, a method of manufacturing a semiconductor device is provided. The method includes forming an etching target layer on a substrate; forming a first photoresist layer on the etching target layer; forming a first alignment key under the first photoresist layer and a first alignment pattern aligned in a first direction perpendicular to a top surface of the substrate, by exposing and developing the first photoresist layer; forming a second alignment key under the first photoresist layer and a second alignment pattern aligned in the first direction, by exposing and developing the first photoresist layer; and forming a third alignment key aligned with the first alignment key in the first direction under the first photoresist layer and a fourth alignment key aligned with the second alignment key in the first direction on the etching target layer based on the first and second alignment patterns.

Growing community of inventors

Seongnam-si, South Korea

Miyoun Kim