Kabushiki Kaisha Toshiba

Miyoko Watanabe

Koichi Mizushima

Satoshi Itoh

Tsuyoshi Kobayashi

Tomio Ono

Kuniyoshi Tanaka

Masao Mashita

Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating BCN compound layer are stacked one upon the other.

Semiconductor device using semiconductor BCN compounds

There is provided a scanning probe microscopy comprising a probe 6 situated to face the surface of an sample 1, a first piezoelectric element 8 for moving the sample 1 and the probe 6 relative to each other in a first direction perpendicular to the surface of the sample, and second and third piezoelectric elements 3 and 4 for moving the probe and the sample relative to each other in second and third directions perpendicular to the first direction, thereby enabling the probe to scan the surface of the sample, wherein at least one of the first to third piezoelectric elements 8, 3 and 4, which is closest to the sample 1, is formed of a single crystal.

Scanning probe microscopy

A probe arranged to oppose a sample is coupled to a driving portion constituted by an actuator capable of obtaining a large expansion/contraction amount and an actuator capable of obtaining a small expansion/contraction amount. In order to keep the gap length between the sample and the probe constant, a first gap length control system drives the actuator and a second gap length control system having a driving time constant smaller than that of the first gap length control system drives the actuator in response to changes in gap length between the sample and the probe.

Growing community of inventors

Yokohama, Japan

Miyoko Watanabe