Hitachi Displays, Ltd.

Ips Alpha Technology, Ltd.

Japan Display Inc.

Panasonic Liquid Crystal Display Co., Ltd.

Miyo Ishii

Kunihiko Watanabe

Junichi Uehara

Manabu Yamashita

Osamu Karikome

A display device includes an electrode layer formed at a predetermined position on a substrate, an insulating film having a through-hole formed on the top of the electrode layer, and a wiring film connected to the electrode layer via the through-hole formed in the insulating film. Based on a surface of the substrate, the through-hole includes a first taper portion having a first taper angle, a second taper portion formed higher than the first taper portion and having a second taper angle different from the first taper angle, and a third taper portion formed higher than the second taper portion and having a third taper angle different from the second taper angle.

Display device and method for manufacturing display device

A display device includes a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer on a substrate. The conductive layer forms a drain electrode and a source electrode of a thin film transistor which are arranged with a channel region of the semiconductor layer therebetween, and one of the drain and source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side so that the one electrode surrounds a distal end portion of another electrode as viewed in a plan view, and a projecting portion is formed on a side of the connecting portion opposite to the another electrode.

Display device and manufacturing method of the same

A display device is provided which comprises a first conductive layer in which a first electrode film is formed, a first insulating layer provided over the first conductive layer, a second conductive layer provided over the first insulating layer and in which a second electrode film is formed at a position different, in plane, from the first electrode film, and a second insulating layer provided over the second conductive layer. Over a surface of the second insulating layer, a recess having, in its inside, a first region in which the first electrode film is exposed, a second region in which the second electrode film is exposed, and a third region which connects the first region and the second region is formed, and a conductive film is formed at least in the first through the third regions.

Display device

The present invention provides a method for manufacturing a display device which can reliably form electrodes in a thin film transistor. A method for manufacturing a display device includes the steps of: preparing a substrate having a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer; forming a drain electrode and a source electrode of a thin film transistor at least in a region where the thin film transistor is formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, wherein the respective electrodes are formed by selectively etching the conductor layer using a photoresist film as a mask; and etching the semiconductor layer using a deformed photoresist film which is formed by directly reflowing the photoresist film as a mask.

The present invention provides a display device which can obviate the occurrence of a leak current in a thin film transistor. In a display device including a substrate, and gate signal lines, an insulation film, semiconductor layers and conductor layers which are sequentially stacked on the substrate, the conductor layer forms at least a drain electrode which is connected to a drain signal line and a source electrode which is connected to a pixel electrode, and the semiconductor layer is formed in a pattern in which the semiconductor layer has a protruding portion which protrudes outwardly from the conductor layer at a portion thereof except for a distal end of the drain electrode as viewed in a plan view.

Growing community of inventors

Chiba, Japan

Miyo Ishii