Semiconductor Energy Laboratory Co., Ltd.

Miyako Nakajima

Hidekazu Miyairi

Mitsuhiro Ichijo

Kazutaka Kuriki

Toshiyuki Isa

Tomokazu Yokoi

Erika Kato

An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.

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Kanagawa, Japan

Miyako Nakajima