Fujitsu Corporation

Nitto Chemical Industry Co., Ltd.

Fujitsu Limtied

Miwa Igarashi

Keiji Watanabe

Ei Yano

Takahisa Namiki

Koji Nozaki

Yoko Kuramitsu

Satoshi Takechi

Makoto Takahashi

Akiko Kotachi

Takashi Maruyama

Yuji Uehara

Keiko Yano

Michiaki Kanamine

Keita Ohtsuka

Yoko Makino

Hiroshi Shirataki

Takashi Saitoh

Yasuhiro Yoneda

Eiichi Hoshino

Tomio Nakamura

Shigeru Shimizu

Masafumi Nakaishi

Kotaro Shirabe

A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.

Method for manufacturing magnetoresistance head

A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

Chemical amplification resist compositions and process for the formation of resist patterns

Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a &mdash;CH,&mdash;R,&prime; group wherein R,&prime; is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm,) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.

Chemically amplified resist compositions and process for the formation of resist patterns

Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

Chemically amplified resist compositions and process for the formation

The negative-working resist composition which comprises a (meth)acrylate copolymer comprising (a) a vinyl monomer unit which contains in a side chain thereof at least one carbon--carbon double bond which does not concern itself with any polymerization reaction, but is able to be crosslinked with a crosslinking agent, (b) an acrylamide or methacrylamide monomer unit, (c) an acrylic acid or methacrylic acid monomer unit and (d) an acrylic acid or methacrylic acid adamantyl monomer unit as well as a crosslinking agent capable of being decomposed upon exposure to a patterning radiation and then causing crosslinking of said copolymer upon heating. The resist composition is particularly suitable for excimer laser lithography using an aqueous basic solution as a developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

Resist compositions for forming resist patterns

The present invention discloses a chemically amplified resist composition that is able to form a resist pattern that can be exposed in short wavelength regions, has good transparency, sensitivity, dry-etch resistance and resolution, while also exhibiting excellent adhesion to the substrate. This chemically amplified resist composition comprises: the combination of a base resin comprised of a polymer that is itself insoluble in a basic aqueous solution and contains at least (A) a monomer unit I having carboxylic acid or phenol protected with a specific protective group, and (B) a monomer unit II having an ester group or ether group that contains a cyclic carbonate structure, and can become soluble in a basic aqueous solution when the protective group of the monomer unit I is deprotected by the effect of the acid; and, a photo acid generator capable of generating an acid that can provoke deprotection of the protective group of monomer unit I when decomposed by absorption of imaging radiation.

Resist composition, a process for forming a resist pattern and a process

An electroconductive pattern is formed by coating a substrate with a solution comprising 100 parts by weight of a soluble electroconductive polymer containing an organic radical capable of cross-linking with a cross-linking agent, 5 to 1,000 parts by weight of a cross-linking agent, and 100 to 100,000 parts by weight of a solvent; effecting cross-linking of the resultant coated film to obtain a cured electroconductive film having a sheet resistance of 10.sup.10 .OMEGA./.quadrature. or less; forming a pattern as an upper layer on the cured electroconductive layer; and transferring the pattern of the upper layer to the cured electroconductive layer.

Processes for forming resist pattern and for producing semiconductor

Resist compositions and process for the formation of resist patterns

A composition for forming a conductivity imparting agent comprising:

Composition for forming conductivity imparting agent and pattern forming

Growing community of inventors

Kawasaki, Japan

Miwa Igarashi