Sumitomo Electric Industries, Limited

Mituo Osada

Yoshinari Amano

Nobuo Ogasa

Akira Ohtsuka

Akira Ohtusuka

This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

Substrate for semiconductor apparatus

This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.

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Itami, Japan

Mituo Osada