Sharp Kabushiki Kaisha Corporation

Mituo Matunami

Masayoshi Koba

Toshiaki Miyajima

Kazumasa Kioi

Minoru Yoshioka

Tukasa Doi

An optically driven semiconductor device is disclosed which comprises a semiconductor substrate, a plurality of vertical field effect transistors formed on the substrate, and a plurality of optoelectric transducers formed on an insulating film above the respective transistors, wherein the transistors have the substrate in common as a drain. Also disclosed is an optically driven semiconductor device which comprises a semiconductor substrate, a vertical field effect transistor formed on the substrate and a solar cell formed on an insulating film above the substrate, wherein the solar cell is formed with a polycrystalline silicon layer or monocrystalline silicon layer grown by the chemical vapor deposition method. Moreover, there are disclosed optically coupled semiconductor relay devices using these optically driven semiconductor devices.

Optically driven semiconductor device

The present disclosure is directed toward a method for making semiconductor devices having beam leads for electrical connections to external terminals. An undercoating metal film is deposited directly or via a protective film on a semiconductor wafer on which interconnections are formed together with electrode pad or contact areas. After subsequent deposition of an upper metal film, beam leads are formed in a desired pattern in a manner to contact with and extend from the electrode areas. The final step is to apply physical force to the semiconductor wafer such that the undercoating metal film serving also as a portion of the beam leads is forcibly spaced away from the major surface of the semiconductor wafer.

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Tenri, Japan

Mituo Matunami