Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Tokyo Shibaura Electric Co., Ltd.

Mituo Kawai

Noriaki Yagi

Takashi Ishigami

Michio Satou

Takashi Yamanobe

Shigeru Ando

Toshihiro Maki

Minoru Obata

Hideo Ishihara

Masao Yamamoto

Yoshiharu Fukasawa

Hiromi Shizu

Takashi Yebisuya

Takasi Yamanobe

Tooru Komatu

Noboru Kitamori

Tatsuyoshi Aisaka

Masanori Kibata

Koichi Tajima

Kazunori Yokosu

Shigeki Kajima

Takashi Fujita

Hiroshi Abe

Osamu Watanabe

Masahiko Hasunuma

Atsuko Iida

Yasuhisa Oana

Sakae Kimura

Tetsuo Fujiwara

Hisato Kamohara

Hideo Koizumi

Masatoshi Nakagawa

Takenori Umeki

Kaoru Tada

Tatsuhiko Matsumoto

Suteto Hasegawa

Takeo Nawai

Kei Honma

Shigeru Ueda

Hiroyuki Saitou

Yuji Yasuda

Noriyuki Chujyo

Kanzi Kawaguchi

Touru Yakabe

Hideo Shirai

The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

Highly purified titanium material, method for preparation of it and sputtering target using it

This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

Highly purified metal material and sputtering target using the same

According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

Sputtered silicide film

Highly purified titanium material, method for preparation of it and

Sputtering target, film resistor and thermal printer head

According to the present invention, silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

Sputtering target and method of manufacturing the same

A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.

Ti-W sputtering target and method for manufacturing same

In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.

A high temperature heat-treating jig characterized by forming a tungsten layer or a tungsten alloy layer on the surface of a heat-resistant base to avoid discoloration and color shading during the heat treatment at a high temperature.

High temperature heat-treating jig

Highly purified titanium material and its named article, a sputtering

This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

Growing community of inventors

Yokohama, Japan

Mituo Kawai