Oki Electric Industry Co., Ltd.

Mituhiko Ogihara

Yukio Nakamura

Masumi Taninaka

Takatoku Shimizu

Ichimatsu Abiko

Kazuo Tokura

Hiroshi Furuya

Mio Chiba

Katsuzo Kaminishi

Yasuo Iguti

According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 .mu.m, for adequate sensitivity, and an impurity concentration of at least 5.times.10.sup.20 atoms/cm.sup.-3, for adequate emission. According to a second aspect of the invention, a light-emitting and light-sensing diode has a doped region with a deep part and a shallow part, and the area of the shallow part is increased to enhance the sensitivity of the diode. This may be done by providing the doped region with a meandering edge, or with one or more interior islands, or by forming the deep and shallow parts separately.

Light-emitting and light-sensing diode array device, and light-emitting

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Tokyo, Japan

Mituhiko Ogihara