Seiko Instruments Inc

Nippon Steel Corporation

Kabushiki Kaisha Daini Seikosha

Sii Nanotechnology Inc.

Seiko Instruments & Electronics Ltd.

Mitsuyoshi Sato

Yoshitomo Nakagawa

Akira Yonezawa

Seiji Morita

Atsushi Uemoto

Takashi Kaito

Koichi Kitamura

Osamu Takaoka

Anto Yasaka

Tomio Sasaki

Osamu Hattori

Hiroshi Ishijima

Hiromu Soga

Sumio Sasaki

Anton Yasaka

In order to ensure that an electromagnetic field lens is capable of high-resolution observation using a magnetic field lens without leakage of magnetic flux, there is provided a magnetic field superimposing-type lens for focusing an electron beam onto a sample so as to irradiate the sample is provided with an upper magnetic pole a long way from the sample and a lower side magnetic pole close to the sample , with electrical insulation being provided between the upper magnetic pole and the lower magnetic pole by a ferrite insulator provided between the upper magnetic pole and the lower magnetic pole in an integral manner with the magnetic poles so that the upper magnetic pole and the lower magnetic pole may be held at different potentials. There is therefore no leak in flux from between the upper magnetic pole and the lower-magnetic pole , the chromatic aberration coefficient Cc can be made small, and high-resolution observation of the sample can be achieved.

Electron beam apparatus

A scanning electron microscope equipped with a laser defect detection function has an automatic focusing function that performs the steps of: obtaining a deviation (offset) amount between focal positions of an optical microscope and a scanning electron microscope; detecting a defect by a laser dark-field image of the optical microscope; analyzing the dark-field image to readjust a focus of the optical microscope to adjust a height of the optical microscope; and automatically adjusting a focus of the scanning electron microscope by adding a readjusted amount of the focus of the optical microscope to the offset amount before an observation is conducted by the scanning electron microscope.

Automatic focusing system for scanning electron microscope equipped with laser defect detection function

An high resolution electron beam observation instrument has an electron beam source, an electron beam optical system for converging the electron beam and scanning the electron beam across the surface of a sample, and a compound magnetic and electrostatic objective lens comprising a single pole magnetic lens having a single magnetic pole portion disposed between the electron beam source and the sample and an electrostatic immersion lens, the electrostatic immersion lens comprising an upper electrode and a lower electrode, one end of the upper electrode extending between the single magnetic pole portion and the sample, and the lower electrode being disposed between the upper electrode and the sample; wherein a deceleration electric field is generated between the upper electrode and the lower electrode to allow high resolution observation of the sample. The upper electrode may comprise the single magnetic pole portion of the single pole magnetic lens, or one or more seperate electrodes. The single pole magnetic lens has a conical shaped portion extending between the single magnetic pole portion and the electron beam source. A potential applied to the sample differs from a potential applied to the lower electrode when the sample is not inclined and a difference between the potentials of the sample and the lower electrode is reduced, or the potentials are made equal to each other when the sample is inclined by the sample inclining means.

Electron beam device

An apparatus for treating a sample comprises an ion source for irradiating a designated area of the sample with a focused ion beam, a vessel for storing compound to be vaporized, a heater surrounding the vessel for heating the compound to vaporize the same inside the vessel to produce compound vapor, and a nozzle for directing the compound vapor in the form of a vapor stream onto the designated area of the sample being irradiated with the focused ion beam. A valve is disposed along the fluid communication path between the vessel and the nozzle and has a closed state for blocking the flow of compound vapor through the nozzle and an open state for permitting the flow of compound vapor through the nozzle. The apparatus can be used to form pattern films on substrates, to repair defects in photo-masks and X-ray masks, and to cut or connect wiring in integrated circuits.

Mask-repairing device

According to the present invention, an apparatus for correcting a pattern film wherein an organic compound vapor is directed to a defect in a mask or IC while an ion beam is irradiated and scanned for depositing film on the white defect is furnished with a circuit for calculating film deposition area based on the reproduced image of a mask pattern, whereby elongating the total scanning time by inserting blank time in the scanning time, during which the ion beam is not irradiated (this operation is hereinafter referred to as blanking), when the ratio of the film deposition area to the ion beam current for an organic compound directed by a gas gun is lower than a predetermined level. Because of this operation, the molecule of the organic compound vapor is sufficiently deposited on the mask of IC surface, and therefore, a film having good light shielding or good conductance can be deposited with strong bonding.

Method of correcting a pattern film

The present invention relates to an apparatus for repairing a pattern film of a photomask, reticle, X-ray mask, semiconductor, etc. In the apparatus, a focused ion beam is applied to an excess portion of a pattern film which is formed on a substrate. The excess portion of the pattern film is removed by means of ion sputtering. For repairing an excess portion of the pattern film, an etching gas is provided to a position that is being irradiated with the scanning focused ion beam thereby increasing the reliability of repairing and carrying out repair of the excess portion of the pattern film with good quality. Further, the removal speed of the excess portion film is improved.

Apparatus for repairing a pattern film

Macroanalyzer system comprising in combination: a crystal for separating X-ray emitted from a sample, an X-ray detector for detecting X-ray which are separated by the crystal, and a solar slit member located between the crystal, sample and X-ray detector. An operation circuit receives the output of said X-ray detector to eliminate the effect of the X-ray passing through the solar slit.

Macroanalyzer system

In a method for the measurement of the distribution of the inclusions in a slab by electron beam irradiation, an electron beam of relatively large diameter is irradiated onto a relatively large specimen of the slab and a spectrum analysis of the characteristic X-rays is effected by using planar analyzing crystals, in order to obtain the data of the two-dimensional distribution of the elements of the inclusions in the surface of the specimen.

Growing community of inventors

Chiba, Japan

Mitsuyoshi Sato