Kabushiki Kaisha Toshiba

Mitsuyoshi Kobayashi

Risako Ueno

Hideyuki Funaki

Honam Kwon

Hiroto Honda

Kazuhiro Suzuki

Isao Takasu

Satomi Taguchi

Rei Hasegawa

Atsushi Wada

Yuko Kizu

Machiko Ito

Yukio Kizaki

Naoto Kume

Takashi Sasaki

Satoshi Takayama

Koichi Ishii

Tsutomu Nakanishi

Go Kawata

Yuko Nomura

Ryosuke Nonaka

Keiji Sugi

Yasuharu Hosono

Tomoya Tsuruyama

Kazunori Miyazaki

According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.

Photodetection element and photodetector

According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first metal layer, a second metal layer, and an organic semiconductor layer provided between the first metal layer and the second metal layer.

Radiation detector

According to an embodiment, a radiation detector includes a first scintillator, a second scintillator, and a photoelectric conversion element. The first scintillator converts radiation into light. The second scintillator converts radiation into light and has higher density than the first scintillator. The photoelectric conversion element is provided between the first scintillator and the second scintillator, and includes a photoelectric conversion layer converting light into electric charge.

Radiation detector and radiation detector assembly

According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first scintillator layer, a first conductive layer, a second conductive layer and an organic semiconductor layer. The second conductive layer is provided between the first scintillator layer and the first conductive layer. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first element. The first element includes at least one selected from the group consisting of boron, gadolinium, helium, lithium, and cadmium.

According to an embodiment, a photodetector includes a first photoelectric conversion element, a second photoelectric conversion element, and an absorption layer. The first photoelectric conversion element includes a first photoelectric conversion layer for converting energy of radiation into electric charges. The second photoelectric conversion element includes a second photoelectric conversion layer for converting energy of radiation into electric charges. The absorption layer is arranged between the first photoelectric conversion element and the second photoelectric conversion element to absorb radiation having energy equal to or lower than a threshold value.

Photodetector and detection device

According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first conductive layer and the second conductive layer. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region including a portion provided around the particles. A diameter is not less than 1 nanometer and not more than 20 nanometers for at least a portion of the particles. A first bandgap energy of the plurality of particles is larger than a second bandgap energy of the organic semiconductor region.

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital. The second lowest unoccupied molecular orbital is higher than the third lowest unoccupied molecular orbital.

A method of manufacturing a radiation detector according to an embodiment includes: forming a plurality of scintillator array columns, each of the scintillator array columns being formed by preparing a scintillator member that a thickness being smaller than a length and a width, the scintillator member having a first face, a second face, a third face, and a fourth face, and being cut from the third face along the second direction to form at least a groove that penetrates from the first face to the second face but does not reach the fourth face to have an uncut portion near the fourth face; stacking the scintillator array columns in the first direction with a space between each of adjacent two scintillator array columns, and filling a spacer material into the space; inserting a reflector into each space and each groove; and cutting the uncut portion.

Radiation detector, radiation detection apparatus, and method of manufacturing radiation detector

An optical device includes a light-shielding layer and a microlens array. The light-shielding layer includes a plurality of openings. The microlens array is divided into a plurality of microlenses corresponding to the respective plurality of openings. A refractive index of the microlens array is variable so that light is incident on the microlenses is focused on the respective plurality of openings. A portion where light is focused includes a central position of the corresponding opening.

Optical device and head-mounted display device and imaging device equipped with the same

According to an embodiment, an image processing method is implemented in an imaging device that includes a microlens array including microlenses, a main lens configured to guide light from a photographic subject to the microlens array, and an image sensor configured to receive the light after passing through the main lens and the microlens array. The method includes: obtaining an image captured by the image sensor; setting, according to an image height, an arrangement of a microlens image of interest and comparison-target microlens images from among microlens images that are included in the image and that are formed by the microlenses; detecting an amount of image shift between the microlens image of interest and each of the comparison-target microlens images by comparing the microlens image of interest with the comparison-target microlens images; and calculating a distance corresponding to the microlens image of interest using the amounts of image shift.

Image processing method and imaging device

A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes.

Liquid crystal optical device, solid state imaging device, portable information terminal, and display device

According to an embodiment, a color filter array includes a plurality of color filters of multiple colors. The color filters are arranged so that each of the color filter of each color corresponds to any one of a plurality of microlenses included in a microlens array. Each microlens is configured to irradiate a plurality of pixels with light.

Color filter array and solid-state image sensor

According to an embodiment, a microlens array for a solid-state image sensing device includes a plurality of microlenses and a state detector. The plurality of microlenses are disposed in an imaging microlens area and is configured to form two-dimensional images. The state detector is disposed on a periphery of the imaging microlens area and is configured to, on an image forming surface of the microlenses, generate images having a smaller diameter than images formed by the microlenses.

Microlens array for solid-state image sensing device, solid-state image sensing device, imaging device, and lens unit

According to an embodiment, a measuring device includes a plurality of scintillators, plurality of receiving elements, and a processor. The scintillators each convert incident radiation into light. The receiving elements each convert scintillation light received by a light receiving surface thereof into an electric signal. The processor acquires a value corresponding to an intensity of the incident radiation based on the electric signal. Each of the scintillators includes an incident surface on which the radiation is incident. The incident surface includes an inclination that has a predetermined angle with respect to the light receiving surface and that is asymmetric with respect to a center of the incident surface. The scintillators are arrayed on a plane including the light receiving surface.

Growing community of inventors

Tokyo, Japan

Mitsuyoshi Kobayashi