Kabushiki Kaisha Toshiba

Other

Kabushiki Kaishi Toshiba

Alpad Corporation

Samsung Electronics Co., Ltd.

Mitsuyoshi Endo

Hideto Furuyama

Shuji Itonaga

Chiaki Takubo

Yukihiro Nomura

Miyuki Shimojuku

Akihiro Kojima

Takashi Yamazaki

Kazuyuki Higashi

Keiichi Yano

Fumio Ueno

Akihiro Horiguchi

Takashi Imoto

Yoshiaki Sugizaki

Hideo Aoki

Hideki Sato

Shinya Ito

Hironori Asai

Katsuhiko Oyama

Atsuko Sakata

Yosuke Akimoto

Koji Yamakawa

Yasuyuki Hotta

Toshiro Hiraoka

Mie Matsuo

Miyoko Shimada

Hideyuki Tomizawa

Satoshi Wakatsuki

Shinji Nunotani

Yukako Tsutsumi

Shigeru Matake

Nobuyuki Mizunoya

Mitsuo Kasori

Shun-ichiro Tanaka

Hiroshi Komorita

Naoko Yamaguchi

Kazuo Kimura

Kenro Nakamura

Mitsuhiro Nakao

Hideko Mukaida

Kazuo Shinozaki

Yoshitoshi Sato

Mituo Kasori

Takashi Shirono

Kengo Uchida

Jun Monma

Kazuo Fujimura

Mikio Matsui

Misa Sawanobori

Hirohisa Osoguchi

A manufacturing apparatus includes a first supporting section to support a first tape section. The first tape section has a first surface facing away from the first supporting section. For example, a semiconductor chip can be disposed on the first surface. A second supporting section of the apparatus supports a second tape section in a facing arrangement with the first tape section. The second tape section has a second surface facing away from the second supporting section. For example, a semiconductor chip can be transferred from the first surface to the second surface in a manufacturing process. A ring element is between the first and second tape sections and surrounds a space between the first and second tape sections. The ring element has a port allowing fluid communication between the space and an outlet port.

Manufacturing apparatus of semiconductor device, and manufacturing method of semiconductor device

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Semiconductor light emitting device and method for manufacturing same

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; a p-side electrode; an n-side electrode; a first p-side pillar; a first n-side pillar; a first insulating layer; a fluorescer layer; a second insulating layer; a p-side interconnect; and an n-side interconnect. The second insulating layer is provided as one body in at least a portion of an outer side of a side surface of the first insulating layer and at least a portion of an outer side of a side surface of the fluorescer layer.

According to one embodiment, a manufacturing method of a semiconductor device includes the transferring a first group from a first support to a second support; the deforming the second support to convert each pitch of the semiconductor chips in the first group transferred on the second support into a second pitch different from the first pitch; the forming an insulating layer around each of the semiconductor chips, the insulating layer covering each of the semiconductor chips in the first group arranged in the second pitch; and the dicing the insulating layer. The first group is selected from a plurality of semiconductor chips supported by the first support. The plurality of semiconductor chips is arranged in an initial pitch. The first group is arranged in a first pitch being longer than the initial pitch.

Semiconductor device and manufacturing method of semiconductor device

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer having a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, a light emitting layer, a first surface, and a second surface opposite to the first surface; an n-side electrode; a p-side electrode; a third layer; an insulating member; an n-side metal portion; and a p-side metal portion. The insulating member has a lower surface. A height of the lower surface is higher than a height of the first surface. The insulating member covers a periphery of the third layer, and has light reflectivity on at least a surface of a part adjacent to a side surface of the third layer.

Semiconductor light emitting device and method of manufacturing the same

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface; a p-side electrode; an n-side electrode; a p-side pillar; an n-side pillar; a first insulating layer; an optical layer; a second insulating layer; a first layer; a p-side interconnect; and an n-side interconnect. The first layer includes a first lower end portion and a second lower end portion.

A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.

Semiconductor device

According to one embodiment, a stack includes first and second wiring structures and an inspection circuit. The inspection circuit includes a switching circuit having an input terminal, a drive terminal, and an output terminal electrically connected with a discharge mechanism. The inspection circuit is configured such that, in a state where a first electric connection is made in the first wiring structure and a second electric connection is made in the second wiring structure, at the time of applying charges to first and second electrodes, the charge applied to the second electrode flows to the drive terminal through the second wiring structure to bring the input terminal and the output terminal of the switching circuit into an electrically conducted state, and the charge applied to the first electrode flows to the discharge mechanism through the first wiring structure and the switching circuit.

Stack including inspection circuit, inspection method and inspection apparatus

According to one embodiment, there is provided a substrate bonding method. The substrate bonding method includes disposing a first substrate and a second substrate to face each other. The substrate bonding method includes controlling the first substrate and the second substrate to have a temperature difference. The substrate bonding method includes, in a state where the first substrate and the second substrate are controlled to have the temperature difference, bonding the first substrate to the second substrate by bringing the first substrate into contact with the second substrate while deforming the first substrate so that a central portion of the first substrate is projected toward the second substrate. The central portion of the first substrate is on an inner side of a peripheral portion of the first substrate.

Substrate bonding method and substrate bonding apparatus

According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.

Semiconductor device manufacturing method and manufacturing apparatus

According to one embodiment, a first back surface of a first substrate and a second front surface of a second substrate are jointed together so as to connect a first conductor with a second conductor. The first conductor includes a portion having a diameter equal to that of a first gap formed above a first metal layer in a range between the first metal layer and a first front surface, and a portion having a diameter greater than that of the first gap and smaller than an outer diameter of the first metal layer in a range between the first metal layer and the first back surface. A first insulating layer has a gap formed above the first metal layer, the gap being greater than the first gap and smaller than the outer diameter of the first metal layer.

Semiconductor device and manufacturing method thereof

According to one embodiment, a semiconductor wafer includes a semiconductor substrate and an interconnect layer formed on the semiconductor substrate. In the semiconductor wafer, the semiconductor substrate includes a first region that is located on the outer periphery side of the semiconductor substrate and that is not covered with the interconnect layer. The interconnect layer includes a second region where the upper surface of the interconnect layer is substantially flat. A first insulating film is formed in the first region. The upper surface of the interconnect layer within the second region and the upper surface of the first insulating film substantially flush with each other.

Semiconductor wafer and laminate structure including the same

A variable capacity element has a substrate, a pair of capacitor electrodes, a pair of driver electrodes, and a pair of capacitor wirings why one of the capacitor electrodes is movable by applying a voltage between the driver electrodes. A pair of driver electrodes are connected to the pair of capacitor electrodes, being insulated from the capacitor electrodes. A pair of capacitor wiring extend in parallel each other from connecting portions with the pairs of the capacitor electrodes, being electrically connected with the capacitor electrodes.

Variable capacity element

According to one embodiment, a semiconductor device includes a semiconductor substrate, a first insulating layer, an electrode pad, a through hole, a second insulating layer, and a conductive material. A through groove passes through the semiconductor substrate from a surface to an opposite surface. The first insulating layer fills the through groove. The electrode pad is connected with an interconnection layer. The second insulating layer is provided between the electrode pad and the first insulating layer. The through hole communicates with the electrode pad and passes through the first insulating layer and the second insulating layer. The conductive material is provided in the through hole so as to be connected with the electrode pad.

Semiconductor device and method of manufacturing the same

First and second wires are formed so that the further away from a semiconductor chip, the greater the distance between the first and second wires. This prevents currents flowing through the first and second wires from cancelling out each other, and further enables a metallic plate to be disposed as far away from the semiconductor chip as possible. In addition, configuring the metallic plate to have a constant width that is wider than the diameters of the first and second wires results in a wide connection range, thereby ensuring connection even when mounting misalignments occur between the wires and the metallic plate.

Antenna device and radio communication device

Growing community of inventors

Yamato, Japan

Mitsuyoshi Endo