Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Mitsuyasu Matsuo

Shinji Baba

Masatoshi Yasunaga

Hironori Matsushima

Shin Nakao

Toru Sugiyama

Youichi Hisamori

Takaaki Kobayashi

Jiro Kitayama

Toshiaki Nakagami

Hiroyoshi Kishimoto

Takeshi Kurosaki

Kyoko Fukumura

An information-technology utilization evaluation device includes a first determination unit to determine an attainment level of a first evaluation element in an evaluation-target management target process including a set of unit processes. The first evaluation element represents a degree of automation achieved by utilizing information technology. The information-technology utilization evaluation device includes a second determination unit to determine an attainment level of a second evaluation element in the management target process. The second evaluation element represents a scale of a set of unit processes utilizing the information technology.

Information-technology utilization evaluation device and information-technology utilization evaluation method

A semiconductor laser light source device and light source unit according to the present invention include a first plate-like member made of metal, to which a semiconductor laser array is joined along the end portion, a second plate-like member made of metal, in which an inlet opening portion, which introduces cooling fluid, and a cooling fluid draining channel, and a third plate-like member made of metal, which is formed along the area corresponding to the end portion and to which at least one cooling channel is provided through which cooling fluid flows in the longitudinal direction of the semiconductor laser array by communicating the cooling fluid introducing channel and the cooling fluid draining channel. Thus, the sectional area of the channel can be larger than that in the construction of the related art and the processing cost is reduced by comparison with the construction of the related art. The problems of blocking path with an extraneous matter and of high-pressure loss due to the path are overcome. Since the channel is provided along the longitudinal direction of the semiconductor laser array, the semiconductor laser array can be cooled efficiently.

Cooling device, semiconductor laser light source device, semiconductor laser source unit, method of manufacturing semiconductor laser light source unit and solid state laser device

Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a periphery of the base metal layer is formed on the insulating layer. Connection layers are formed on the base metal layers. First conductors are formed on the connection layers. A seal resin exposing only top surfaces of the first conductors is formed. Lumpish second conductors are formed on the top surfaces of the first conductor. Thereby, a resin seal semiconductor package can be made compact and it has improved electrical characteristics and high reliability.

Resin seal semiconductor package and manufacturing method of the same

Resin seal semiconductor package

Growing community of inventors

Tokyo, Japan

Mitsuyasu Matsuo