Denso Corporation

Mitsuyasu Enomoto

Haruo Kawakita

Takashi Ohno

Kouji Andoh

A semiconductor device includes a circuit board, a wiring part, a protective coating glass, and a resin part. The circuit board has an approximately rectangular shape. The protective coating glass is disposed on the circuit board and is arranged on an inside of the circuit board in such a manner that an outer-peripheral end of the protective coating glass is away from each of four sides of the circuit board at a first distance and is away from each of four corners of the circuit board at a second distance that is larger than the first distance. The resin part seals the circuit board, the wiring part, and the protective coating glass in such a manner that an outer-peripheral end portion of the circuit board that is located on an outside of the protective coating glass directly contact with the resin part.

Resin molded semiconductor device

A resin-sealed semiconductor device includes a metal frame, an electronic substrate, an adhesive agent, a molded resin, and a bonding agent. The electronic substrate includes a first surface having a circuit element wiring part, a second surface facing the metal frame, and a side surface arranged approximately perpendicularly to the first surface and the second surface. The adhesive agent is disposed between the metal frame and the second surface to cover the second surface and a portion of the side surface adjacent to the second surface. The molded resin covers the metal frame and the electronic substrate, and holds the other portion of the side surface adjacent to the first surface. The bonding agent is disposed between the circuit element wiring part and the molded resin so that the molded resin holds the circuit element wiring part through the bonding agent.

Resin-sealed electronic device and method of manufacturing the same

A protection circuit can be prevented from malfunctioning due to the parasitic operation attributable to the unstable base potential of a transistor. In one embodiment, the protection circuit can be constituted by a reverse transistor system where the bases of transistors are connected to the collectors so that bases and collector potentials are the same. With the above configuration, the base potential is stabilized, and even if a parasitic potential is applied to the base as noise, malfunction associated with transistors turn on due to parasitic operation can be prevented. Since the base potential is stabilized, the protection circuit transistors turn on with greater certainty when a surge current occurs such that the surge current is absorbed by the protection circuit and flows to GND.

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Anjo, Japan

Mitsuyasu Enomoto