Asm IP Holding B.v.

Mitsuya Utsuno

Yoshio Susa

Atsuki Fukazawa

Tomohiro Kubota

Toshihisa Nozawa

Timothee Julien Vincent Blanquart

Seiji Samukawa

Hua Hsuan Chen

Toshio Nakanishi

Dai Ishikawa

Hirotsugu Sugiura

Yan Zhang

Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

Method of forming structures using a neutral beam

Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.

Method of forming high aspect ratio features

A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or Nplasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition

Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure

Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.

Growing community of inventors

Tachikawa, Japan

Mitsuya Utsuno