Seiko Instruments Inc

Seiko Instruments & Electronics Ltd.

Mitsuya Suzuki

Shunichi Motte

A method for manufacturing a non-linear resistive element array on a substrate, comprising: depositing a first conductive layer on the substrate and selectively forming the layer in a desired pattern; depositing a non-linear resistive layer on the first conductive layer; depositing a second conductive layer on the non-linear resistive layer; forming the second conductive layer in a desired pattern by etching process using a patterned resist layer as a mask; and forming the non-linear resistive layer in a desired pattern using the resist layer as a mask.

Method of manufacturing non-linear resistive element array

An electro-optical device has a plurality of electro-optical elements arranged in a matrix and optically activated selectively in response to voltage pulses applied thereto. Each electro-optical element is comprised of first and second electrode layers opposed to each other for selectively receiving thereacross a voltage pulse, and a third electrode layer adjacent to the first electrode layer and in opposed relation to the second electrode layer. A liquid crystal layer is interposed between the second and third electrode layers and optically activated when electrically charged through the third electrode layer. A non-linear-resistive layer is disposed between the first and third electrode layers and operative when the voltage pulse is applied across the first and second electrode layers to increase its electro-conductivity for electrically connecting the first electrode layer to the third electrode layer to thereby electrically charge the liquid crystal layer in response to the voltage pulse. The non-linear-resistive layer is comprised of non-stoichiometric silicon oxide or silicon nitride.

Liquid crystal display device

A matrix electro-optical device is comprised of a plurality of picture elements arranged in a row-and-column matrix. A plurality of switching elements are formed on a substrate of the device and are series-connected to the respective picture elements to selectively drive the picture elements. The switching element is comprised of a non-linear-resistive layer composed of non-stoichiometric silicon nitride or silicon oxide and interposed between a pair of electro-conductive layers.

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Tokyo, Japan

Mitsuya Suzuki