Other

Terumo Kabushiki Kaisha

Ricoh Seiki Company, Ltd.

Ricoh Company, Ltd.

Mitsuteru Kimura

Japan Science and Technology Agency

Tokin Corporation

Ricoh Elemex Corporation

Tohoku Gakuin

Npo Renewable Hydrogen Network

Hme Co., Ltd.

Kimura, Mitsuteru

Takehisa Mori

Kiyoshi Komatsu

Takeshi Kudo

Atsushi Sone

Hiroyuki Sato

Yukito Sato

Noriaki Suzuki

Hiroyoshi Shoji

Hitomi Kadono

Nobuo Tanaka

Masato Honma

Hironori Shimobayashi

Mituyuki Takeda

A wave activated electric power generating system is durable even if exposed to a rainstorm, extremely simple in structure and highly efficient. A motion transfer medium rendering the rotary part of an electric generator less liable to produce slipping and a rotation transform member adapted to rotate while fitting with the motion transfer medium in movement are also provided. The system includes a buoy floating on the sea or lake so as to move up and down with the waves, and an underwater motion restrainer suspended underwater by water resistance, or submerged by its own weight on the sea or lake floor. Vertical movement of the buoy relative to the underwater motion restrainer is converted and transferred by the motion transfer medium in the form of an elongate rope vertically moving under the weight of an element to operate the rotary electric generator securely connected to the buoy.

Wave-power generation system, and transmission body and rotation conversion unit used therefor

Disclosed are a temperature sensor device using a thermopile, the total number n of thermocouples thereon can be increased without greatly increasing the internal resistance of the thermopile r, providing high output level and high S/N ratio, a highly sensitive radiation thermometer using the device, and production method of the device using organic material for thin films to form the thermopile. These provide a standardized inexpensive multi-layered thin film thermopile, a radiation thermometer with high sensitivity, and production method of these devices. The temperature sensor device is a device wherein a thermopile which is formed on a thin film thermally isolated from a substrate is place in a temperature sensing part, and the thin film is formed as a multi-layered thin film, a layered thermopile is formed on each layered thin film, the substrate functioning as a heat sink which is one junction of the reference temperature of the thermopile.

Temperature sensor device and radiation thermometer using this device, production method of temperature sensor device, multi-layered thin film thermopile using photo-resist film and radiation thermometer using this thermopile, and production method of multi-layered thin film thermopile

A specified gas concentration sensor includes a thin film thermally separated from a substrate, which is provided by a heater, a temperature sensor and an absorbing substance of a specified gas, and temperature change accompanied by heat generation while absorbing the specified gas in an ambient gas being capable of measuring by the temperature sensor. The absorbed specified gas is released from the absorbing substance by heating with the heater, and after stopping heating with the heater, the specified gas concentration in the ambient gas is obtained by utilizing an output of the temperature sensor at a time passing a predetermined time which is a thermal time constant of the thin film or longer at which the specified gas is absent from the heater. An optional heat conductive type sensor having no absorbing substance of the specified gas can broaden the measurable range of the specified gas concentration.

Specified gas concentration sensor

A heat conduction-type sensor corrects (calibrate) effects of a temperature of a measurement target fluid and a type of the fluid on a measurement value in measurement of a flow velocity, a mass flow, or an atmospheric pressure. Also provided is a thermal flow sensor and a thermal barometric sensor with this correcting function, high sensitivity, simple configuration, and low cost. At least two thin films that are thermally separated from a substrate through the same cavity are provided, one thin film comprises a heater and a temperature sensor, and the other thin film comprises at least one temperature sensor, the temperature sensors being thin-film thermocouples. The thin film is arranged in proximity so that it is heated only through the measurement target fluid by heating of the heater. A calibration circuit calculates and compares quantities concerning heat transfer coefficients of a standard fluid and the unknown measurement target fluid.

Heat conduction-type sensor for calibrating effects of temperature and type of fluid, and thermal flow sensor and thermal barometric sensor using this sensor

A heat conduction type barometric sensor has high sensitivity and high accuracy that has simple structure and circuit configuration and can measure a barometric pressure in the range of a very low barometric pressure to &#x2267;1 atm using one sensor chip. The sensor includes a cantilever-shaped thin film provided with a thin-film temperature sensor, a heating element, and an excitation element. The excitation element utilizes warpage and bending based on a difference in thermal expansion between two main layers constituting the thin film during intermittent heating by a thin-film heater as the heating element. The two main layers are a silicon layer and a thermally oxidized film of silicon which are significantly different from each other in the coefficient of thermal expansion. A circuit in which the sensitivity is enhanced by the integration of a seebeck current for a predetermined period of time can be also provided.

Heat conduction-type barometric sensor utilizing thermal excitation

A display unit comprising a board (), a three-primary color-independent optical waveguide () arranged and formed on one side thereof, and a transparent electrode () and an electrode () serving as counter electrodes arranged and formed to sandwich an electric field reaction material () formed on one of two optical waveguides constituting the optical waveguide () and being transparent to waveguide light, wherein part of the waveguide light is allowed to pass at least the field reaction material (), and a voltage applied between these counter electrodes changes the shape of the reaction material () to scatter the waveguide light and form pixels in to a displayed image, whereby the device is free from a mechanical drive unit, high in reliability, quality, brightness and response speed, low in power consumption and cost, and capable of full color displaying.

Display unit

At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit () directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.

Method and apparatus for temperature measurement, and thermal infrared image sensor

On a Schottky tunnel junction with Schottky metal as a source, an extremely thin and a high density impurities semiconductor layer having a conduction type different from that of a high density impurities semiconductor constituting the base junction is formed, and height and width of this extremely thin high density impurities semiconductor layer are controlled by adjusting a voltage loaded to a MOS gate formed on this tunnel junction section, so that a main portion of the drain current comprises a carrier passing through the barrier because of the tunnel effect and a carrier moving over this barrier. In addition, a CMOS structure is made to prepare a three-dimensionally or three-dimensionally integrated circuit.

MOS gate Schottky tunnel transistor and an integrated circuit using the same

A thermal analyzer scans temperature by thermally altering a sample and measuring a thermal change based on physical and chemical changes of the sample as a function of time and/or temperature. The thermal analyzer includes a heat-generating section for heating a sample. The heat-generating section includes a first semiconductor substrate of a first conductivity type forming a thin-film heater with a cavity section in a lower section thereof and a second semiconductor substrate of a second conductivity type connected to the first substrate. The cavity section forms a sample holding section for holding the sample. The thermal analyzer further includes a temperature detecting section for detecting a temperature of the sample holding section. The sample holding section and the temperature detecting section are monolithically formed on the thin-film heater or an area proximate the thin-film heater in a thin-film supporting section for supporting the thin-film heater.

Thermal analyzer and a method of measuring with the same

This invention concerns a noncontacting type thermometer which is improved in sensitivity of detection and accuracy of measurement and meanwhile adapted to prevent a thermistor element itself from self-generation of heat. A pulse voltage generating circuit 15 generates a pulse voltage of a rectangular waveform having a pulse wave height, a pulse width, and a pulse cycle enough to render negligible the effects of the self-generation of heat of a thermistor bolometer element in accordance with the thermal capacity of the thermistor bolometer. A detecting circuit 20 admits the pulse voltage, generates a differential voltage arising from a change in the magnitude of resistance corresponding to the amount of an incident infrared radiation of an infrared radiation detecting thermistor bolometer element RA, and amplifies this differential voltage by means of a differential amplifier 24. A voltage adding circuit 30 admits a pulse voltage generated from the differential amplifier 24 synchronously with the pulse cycle of the pulse voltage generated from the pulse voltage generating circuit 15 and adds a prescribed number of pulses of the pulse voltage to produce an ultimate measured voltage.

Noncontacting thermometer

Humidity sensor using temperature sensing resistor controlled to be at

A piezo-electricity generation device without an external power supply unit includes a rectifying means which rectifies an AC voltage generated by the vibration of at least one piezo-electric plate. An accumulating means accumulates an electric charge outputted through the rectifying means. A voltage setting means provides a prespecified voltage. A transmission means transmits substantially all of the electric charge accumulated in the accumulating means to a signal output means when the output voltage of the accumulating means exceeds the prespecified voltage set by the voltage setting means. A timing setting means may also or alternatively be provided for setting a prespecified timing such that the transmission means transmits substantially all of the electric charge stored in the accumulating means at the prespecified timing set by said timing setting means.

Piezo-electricity generation device

A flow sensor eliminates turbulence of fluid flow due to a structure of the temperature detecting portion so that a temperature of the temperature detecting portions does not fluctuate due to the turbulence of the fluid. The flow sensor is formed on a substrate. Each of a first temperature detecting portion and a second temperature detecting portion has a heating function and a temperature detecting function, and are arranged along a direction of flow of the fluid. A supporting portion is formed on the substrate for supporting the first and second temperature detecting portions thereon. The supporting portion does not have a side surface facing substantially in the direction of flow of the fluid. A side surface of the supporting portion is protected by a guard portion formed along the side surface.

Flow sensor having first and second temperature detecting portions for

An infrared radiation sensor of high accuracy is provided which is suitable for a thermometer to be used for effecting noncontacting determination of a temperature of a subject under test, particularly a temperature of a tympanic membrane, by utilizing the temperature characteristics of the saturated current flowing in the reverse direction through a Schottky junction diode. The infrared radiation sensor comprises an n type single crystal area 2 formed in the shape of a thin film by doping a sensor substrate 8 made of p type semiconductor with an n type impurity through the surface of the sensor substrate, a temperature sensor element 1 formed in the n type single crystal area 2, a hollow part 6 formed by removing by electrochemically etching the p type semiconductor from the substantially lower and peripheral parts of the n type single crystal area 2, and a thermally and electrically insulating thin film bridge structure having the n type single crystal area 2 in the shape of a thin film provided with the temperature sensor element 1 carried thereon.

Infrared radiation sensor

The present invention is to provide a compact and high speed tunnel transistor having a high input impedance, yet consuming only a small quantity of power. In a tunnel transistor according to the present invention, a gate electrode is provided via an insulating thin film on a Schottky junction which is a junction between a semiconductor and a metallic layer, a p-n.sup.+ junction between semiconductors, or an n-p.sup.+ junction between semiconductors so that an accumulation layer having a high carrier density is formed bear the surface of a semiconductor by adjusting a gate voltage Vg and thus a tunnel junction is formed between this accumulation layer and a metallic layer or a semiconductor having a high carrier density (n.sup.+ or p.sup.+) by adjusting the gate voltage Vg.

Growing community of inventors

Miyagi, Japan

Mitsuteru Kimura