Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Mitsutaka Hano

Akihisa Yamamoto

Kazuya Hokazono

Jun Fukudome

Hiroshi Sakata

Yo Habu

Yuki Terado

Masayoshi Utani

Shohei Sano

A semiconductor device includes a first switch and a first driver. The first switch selects and outputs one of a power supply potential and a generated potential as a first switch output potential based on a synchronization signal from a transmission circuit and a delayed signal delayed from the synchronization signal. The first driver charges a gate of a bipolar transistor element based on the synchronization signal of the transmission circuit and the first switch output potential.

Semiconductor element driving circuit and semiconductor element driving device

A drive circuit includes a first driver to control on/off of an upper arm, a second driver to control on/off of a lower arm, a first switching device including a first terminal connected with a power supply for the first driver, a second terminal connected with a power supply for the second driver and a control terminal, a booster circuit to turn on the first switching device by boosting a control signal which is at a high level when the lower arm is in an on state, a second switching device to cause continuity between the control terminal and the booster circuit when the control signal is at the high level, and first switch unit to short-circuit the control terminal and the terminal for grounding when the control signal is at the low level.

Drive circuit and inverter device

An object of the present disclosure is to provide a semiconductor device drive circuit stably preventing an erroneous operation in accordance with an application of dV/dt. A semiconductor device drive circuit includes: pulse transmission circuits outputting an on-pulse transmission signal and an off-pulse transmission signal based on a level shift on-pulse signal and a level shift off-pulse signal; a dV/dt detection circuit detecting a dV/dt period based on the level shift on-pulse signal and the level shift off-pulse signal; a logic filter circuit which does not change outputs when both the on-pulse transmission signal and the off-pulse transmission signal are input; and a latch circuit outputting a signal synchronized with an output of the logic filter circuit. The pulse transmission circuit includes impedance adjusting parts reducing a signal level of the on-pulse transmission signal and the off-pulse transmission signal during the dV/dt period.

Semiconductor device drive circuit

A control circuit of the present invention includes a drive circuit for outputting a gate drive signal, a charging circuit for generating a charging current when the drive circuit is started up, and a Vcc control circuit for, upon receiving an output from the charging circuit, outputting a control signal for supplying Vcc for the drive circuit, wherein the drive circuit, the charging circuit, and the Vcc control circuit are provided in one chip.

Control circuit for supplying VCC

A semiconductor device includes a first drive circuit and a bootstrap control circuit. When a voltage Vis equal to or smaller than a power supply voltage V, the boost control circuit turns on a MOSFET by controlling a gate signal input to a gate terminal, and a back gate control circuit makes a voltage applied to a back gate terminal smaller than the voltage V.

Semiconductor device

A current to be supplied to a load driven by the current is linearly controlled in accordance with a voltage. A voltage-current converter according to the present invention includes a differential amplifier, a first current mirror, and a voltage setting unit. The differential amplifier receives an input voltage from an input terminal and outputs a voltage in accordance with a difference between the input voltage and a threshold voltage. The first current mirror receives the voltage from the differential amplifier and outputs an output current to an output terminal. The voltage setting unit sets the threshold voltage.

Voltage-current converter and load driver

A drive circuit is provided with an input terminal for receiving input signals, an output terminal that outputs drive signals generated from the input signals, a control power supply terminal that receives a control power supply voltage, an output terminal that outputs an output signal, and a reset terminal that receives a reset signal. The output signal is given to a gate of a MOSFET. A secondary side circuit and a MOSFET constitute a step-down chopper circuit, which steps down a voltage through duty ratio control of the gate drive signal and generates a control power supply voltage. Upon receipt of a reset signal, the drive circuit stops outputting the drive signal and changes the output signal so as to reduce the control power supply voltage VCC.

Drive circuit for semiconductor device

A gate drive circuit of the present invention is a gate drive circuit for driving an insulated gate switching element, which comprises a control drive circuit for applying a driving voltage to a control terminal of the switching element at a predetermined timing, and a voltage monitoring circuit for monitoring both a first voltage which is a power supply voltage of the control drive circuit and a second voltage which negatively biases the control terminal of the switching element, and in the gate drive circuit, the control drive circuit cuts off an output when at least one of the first and second voltages monitored by the voltage monitoring circuit becomes lower than a threshold value. It is an object of the present invention to provide an insulated gate switching element which can suppress wrong ON.

Gate drive circuit

A semiconductor device includes, a high side drive circuit for controlling the high side power device and including a circuit load, a low side drive circuit for controlling the low side power device, a VCC terminal connected to the low side drive circuit and for supplying a VCC potential to the low side drive circuit, the VCC potential serving as a power supply potential to the low side drive circuit, a bootstrap diode connected at its anode to the VCC terminal and at its cathode to the high side drive circuit and used to produce a VB potential serving as a power supply potential to the high side drive circuit, and means for turning off the circuit load before the VB potential becomes lower than the VCC potential.

Semiconductor device including a bootstrap diode, high side power drive circuit, low side power drive circuit, and control circuit for controlling a high side power device and low side power device

A bootstrap circuit includes at least a chargeable semiconductor element region (D ) and a drift region (Rn, ) of a high-tension island, and junction between the chargeable semiconductor element region and the high-tension island drift region is isolated, and the high-tension island drift region has n&plus; layers ( ) provided at a high-tension side and at an opening portion in an n&minus; semiconductor layer ( ) of a high-tension island, and thus an ON operation of a parasitic transistor can be prevented to thereby reduce a current consumption of the circuits.

Growing community of inventors

Tokyo, Japan

Mitsutaka Hano