Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Mitsushi Fujiki

Wensheng Wang

Ko Nakamura

Jeffrey Scott Cross

Mineharu Tsukada

Katsuyoshi Matsuura

Aki Dote

Tomohiro Takamatsu

Naoya Sashida

Shan Sun

Makoto Takahashi

Yoshimasa Horii

Satoru Mihara

Genichi Komuro

Yukinobu Hikosaka

Kazutoshi Izumi

Jirou Miura

Takeyasu Saito

Naoyuki Satoh

George Hickert

Soichiro Ozawa

Kenkichi Suezawa

Tsuyoshi Sakai

A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.

Semiconductor device and method for manufacturing the same having improved polarization reversal characteristic

An upper electrode layer is processed into plural electrode shapes with lithography and subsequent dry etching to pattern plural upper electrodes, followed by conducting an RTA treatment at a treatment temperature of a value in a range from 400&#xb0; C. to 1000&#xb0; C. and at an oxygen flow volume of a value in a range from 0.1 L/min to 100 L/min and, subsequently, by conducting an annealing treatment at a treatment temperature of 650&#xb0; C. in an oxygen atmosphere for 60 minutes.

Semiconductor device and fabricating method thereof

A ferroelectric capacitor formation method necessary for stably fabricating an FeRAM and a semiconductor device fabrication method. After a PZT film is deposited on a lower electrode layer, the PZT film is crystallized by performing heat treatment in an atmosphere of a mixed gas which contains Ogas and Ar gas. In this case, the flow rate of the Ogas is controlled by one mass flow controller. The flow rate of the Ar gas used for purging and the flow rate of the Ar gas used for adjusting Ogas concentration are controlled by different mass flow controllers. Before raising the temperature, the Ogas, the Ar gas used for purging, and the Ar gas used for adjusting Ogas concentration are made to flow at predetermined flow rates. Only the Ar gas used for purging is stopped, raising the temperature is begun, and the heat treatment is performed. At this time the Ogas and the Ar gas used for adjusting Ogas concentration flow at the predetermined flow rates. As a result, an atmosphere in which the heat treatment is performed for crystallizing the PZT film can be stabilized. Accordingly, a ferroelectric capacitor having predetermined performance is stably formed and an FeRAM is stably fabricated.

Method for forming ferroelectric capacitor and method for fabricating semiconductor device

A semiconductor device includes: a semiconductor substrate; a MOS transistor formed in the semiconductor substrate and having an insulated gate and source/drain regions on both sides of the insulated gate; a ferroelectric capacitor formed above the semiconductor substrate and having a lower electrode, a ferroelectric layer and an upper electrode; a metal film formed on the upper electrode and having a thickness of a half of or thinner than a thickness of the upper electrode; an interlayer insulating film burying the ferroelectric capacitor and the metal film; a conductive plug formed through the interlayer insulating film, reaching the metal film and including a conductive glue film and a tungsten body; and an aluminum wiring formed on the interlayer insulating film and connected to the conductive plug. A new problem near an upper electrode contact is solved which may otherwise be caused by adopting a W plug over the F capacitor.

Semiconductor device having ferroelectric capacitor and its manufacture method

An interlayer insulating film covering a ferroelectric capacitor is formed, and through the interlayer insulating film, contact holes each reaching a capacitor electrode are formed. A wiring connected to the capacitor electrode through the contact hole is further formed above the interlayer insulating film. A planar shape of the contact hole is a regular octagon, a regular rectangle with four angles thereof being rounded, an octagon with a length of each neighboring side thereof being different to each other, a circle, and so forth.

Semiconductor device with specifically shaped contact holes

A capacitor which has a lower electrode having a structure in which the first conductive layer containing a first metal, a second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and a third conductive layer that is formed on the second conductive layer and made of a third metal different from the first metal. These layers are formed sequentially. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the capacitor dielectric layer.

Semiconductor capacitor with diffusion prevention layer

There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.

A method for the fabrication of a cap layer on a top electrode layer of a ferroelectric capacitor includes the steps of depositing an amorphous layer, usually made of Sr Ru O , on the top electrode and then annealing the amorphous layer in two stages in order convert the amorphous layer into the cap layer. The first anneal is performed at 500&deg; C. to 700&deg; C. in a non-oxidizing atmosphere, such as nitrogen, and converts the amorphous layer into a crystallized layer of Sr Ru O . The second anneal is performed at 300&deg; C. to 500&deg; C. in an oxidizing atmosphere, such as oxygen, and converts the crystallized layer into the cap layer. The method is applied to the formation of a ferroelectric capacitor element of an integrated semiconductor device.

Process for producing a strontium ruthenium oxide protective layer on a top electrode

A ferroelectric capacitor includes a lower electrode, a ferroelectric capacitor insulation film formed on the lower electrode and an upper electrode formed on the ferroelectric capacitor insulation film, wherein the ferroelectric capacitor insulation film has a composition of PZT and contains an excess amount of Pb with respect to a stoichiometry of PZT.

Ferroelectric capacitor having a PZT layer with an excess of Pb

A method of manufacturing an electronic device including an oxide film of perovskite-type, said method comprising the steps of forming on a base substrate a first conductive oxide film of perovskite type in an atmosphere of reduced pressure at a first temperature, and performing heat treatment on the first conductive oxide film in an oxidizing atmosphere containing oxygen at a second temperature which is higher than the first temperature.

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Kawasaki, Japan

Mitsushi Fujiki