Texas Instruments Corporation

Magnachip Semiconductor, Inc.

Mitsuru Yoshikawa

Hirofumi Komori

Hiroshi Yamamoto

Tsuyoshi Inoue

Saiki Hotate

Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a substrate having a trench that defines an active region, an isolation layer that buries the trench, a pro-oxidant region formed at an upper corner portion of the trench to enhance oxidation at the upper corner portion of the trench when a gate insulation layer is grown on the active region, and a gate conductive layer formed on the gate insulation layer.

Semiconductor device and method for fabricating the same

The objective of this invention is to provide a semiconductor device and its manufacturing method with which the offset can be kept fixed even in high breakdown voltage MOS transistors, and that can accommodate high voltages for high breakdown voltage MOS transistors and miniaturization of MOS transistors for low voltage drive. Its constitution provides for inner side wall insulating filmsandand outer side wall insulating filmsandformed at both sides of the gate electrodesandin both high breakdown voltage transistor TRand transistor TRfor low voltage drive, and heavily doped regionis formed in breakdown voltage transistor TRusing both inner side wall insulating filmand outer side wall insulating filmas masks so that offset Dis controlled by the combined widths of the two side wall insulating films. In transistor TR1 for low voltage drive, heavily doped regionis formed using only inner side wall insulating filmas the mask, and offset dis controlled.

Semiconductor device and its manufacturing method

A semiconductor substrate that has a MOS transistor with a high breakdown voltage having double sidewall insulation films and can inhibit negative effects on the electric characteristics and method thereof. The semiconductor device is formed as a transistor with a configuration having gate insulation filmand gate electrodeformed on semiconductor substrate, inner sidewall insulation filmformed at least on part of the gate insulation film and on both sides of the gate electrode, outer sidewall insulation filmformed at least on part of the gate insulation film and on both sides of the inner sidewall insulation film, low concentration impurity areacontaining an impurity at a low concentration and formed in the semiconductor substrate in the area underneath the inner sidewall insulation film and the outer sidewall insulation film, and high concentration impurity areacontaining an impurity at a concentration higher than the low concentration impurity area and formed in the semiconductor substrate in the area underneath both sides of the outer sidewall insulation film.

Semiconductor device and manufacturing method thereof

The objective of this invention is to provide a semiconductor device and its manufacturing method with which the offset can be kept fixed even in high breakdown voltage MOS transistors, and that can accommodate high voltages for high breakdown voltage MOS transistors and miniaturization of MOS transistors for low voltage drive. Its constitution provides for inner side wall insulating filmsandand outer side wall insulating filmsandformed at both sides of the gate electrodesandin both high breakdown voltage transistor TRand transistor TRfor low voltage drive, and heavily doped regionis formed in breakdown voltage transistor TRusing both inner side wall insulating filmand outer side wall insulating filmas masks so that offset dis controlled by the combined widths of the two side wall insulating films. In transistor TRfor low voltage drive, heavily doped regionis formed using only inner side wall insulating filmas the mask, and offset dis controlled.

Growing community of inventors

Tsuchiura, Japan

Mitsuru Yoshikawa