Mitsubishi Materials Silicon Corporation

Mitsuru Sudou

Takao Fujikawa

Tetsuya Nakai

Jun Furukawa

Takuya Masui

A hot isostatic pressing treatment is conducted for a single crystal body ( ) in an atmosphere where the single crystal body ( ) is stable, under a pressure of 0.2 to 304 MPa at a temperature which is 0.85 or more times the melting point in an absolute temperature unit of the single crystal body ( ), for 5 minutes to 20 hours; and the single crystal body ( ) is annealed. It is preferable that the atmosphere where the single crystal body ( ) is stable is an inert gas atmosphere or an atmosphere containing vapor of a high vapor pressure element, and it is more preferable that the HIP treatment is conducted under a pressure of 10 to 200 MPa. Further, the single crystal body ( ) may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or wafer obtained by slicing the ingot. In this way, there are expelled or dispersed those lattice defects such as vacancy type grown-in defects existing not only at the surface but also at the interior of the single crystal body ( ), irrespectively of the size of the single crystal body ( ).

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Saitama, Japan

Mitsuru Sudou