Sumitomo Electric Industries, Limited

Mitsuru Shimazu

Kensaku Motoki

Akinori Koukitu

Yoshiki Miura

Hisashi Seki

Masato Matsushima

Katsushi Akita

Toru Hiyoshi

Keiji Wada

Takuji Okahisa

Kikurou Takemoto

Takeyoshi Masuda

Hirohiko Nakata

Hiromu Shiomi

Makoto Kiyama

Takashi Matsuura

Yasuo Namikawa

Yoshiyuki Hirose

Kazutaka Sasaki

Satomi Itoh

A diode having excellent switching characteristics is provided. A diode includes a silicon carbide substrate, a stop layer, a drift layer, a guard ring, a Schottky electrode, an ohmic electrode, and a surface protecting film. At a measurement temperature of 25&#xb0; C., a product R&#x2022;Q of a forward ON resistance R of the diode and response charges Q of the diode satisfies relation of R&#x2022;Q&#x2266;0.24&#xd7;V. The ON resistance R is found from forward current-voltage characteristics of the diode. A reverse blocking voltage Vis defined as a reverse voltage which produces breakdown of the diode. The response charges Q are found by integrating a capacitance (C) obtained in reverse capacitance-voltage characteristics of the diode in a range from 0 V to V.

Diode

A silicon carbide semiconductor device includes an insulation film, and a silicon carbide layer having a surface covered with the insulation film. The surface includes a first region. The first region has a first plane orientation at least partially. The first plane orientation is any of a (0-33-8) plane, (30-3-8) plane, (-330-8) plane, (03-3-8) plane, (-303-8) plane, and (3-30-8) plane.

Silicon carbide semiconductor device

There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed.

Method for manufacturing silicon carbide semiconductor device

The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 &mgr;m or more and a method for preparing it.

Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate

Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same

A ceramic base plate of aluminum nitride ceramics, for example, as a power module board has a metal layer on a surface of the ceramic base plate at a fixing portion at which the ceramic base plate is fixed onto a heat radiating plate. Further, a metal film is provided entirely on the rear surface of the ceramic base plate. An IGBT chip or the like is fixed onto the ceramic base plate with a conductive layer interposed therebetween, to form a power module board. Therefore, it is possible to avoid the generation of cracks when the ceramic base plate is mechanically fixed onto the heat radiating plate without using solder, and heat radiation from the ceramic base plate to the heat radiating plate can be improved.

Power module board and power module using the board

An epitaxial wafer enabling epitaxial growth at a high temperature includes a compound semiconductor substrate containing As or P, and a covering layer including GaN; or InN; or AlN; or a nitride mixed-crystalline material containing Al, Ga, In and N. The covering layer covers at least a front surface and a back surface of the substrate. A method of preparing such an epitaxial wafer including steps of growing the covering layer at a growth temperature of at least 300.degree. C. and less than 800.degree. C. so as to cover at least the front and back surfaces of the substrate, and then annealing the substrate having the covering thereon layer at a temperature of at least 700.degree. C. and less than 1200.degree. C.

Epitaxial wafer and method of preparing the same

A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0&lt;x&lt;1) on a substrate. A first gas including indium trichloride (InCl.sub.3) and a second gas including ammonia (NH.sub.3) are introduced into a reaction chamber and heated at a first temperature. Indium nitride (InN) is grown epitaxially on the substrate by nitrogen (N.sub.2) carrier gas to form an InN buffer layer. Thereafter, a third gas including hydrogen chloride (H1) and gallium (Ga) is introduced with the first and second gases into a chamber heated at a second temperature higher than the first temperature and an epitaxial In.sub.x Ga.sub.1-x N layer is grown on the buffer layer by N.sub.2 gas. By using helium, instead of N.sub.2, as carrier gas, the In.sub.x Ga.sub.1-x N layer with more homogeneous quality is obtained. In addition, the InN buffer layer is allowed to be modified into a GaN buffer layer.

Process for vapor phase epitaxy of compound semiconductor

A light emitting device having higher blue luminance is obtained. A gallium nitride compound layer is formed on a GaAs substrate, and thereafter the GaAs substrate is at least partially removed for forming the light emitting device. Due to the removal of the GaAs substrate, the quantity of light absorption is reduced as compared with the case of leaving the overall GaAs substrate. Thus, a light emitting device having high blue luminance is obtained.

Growing community of inventors

Osaka, Japan

Mitsuru Shimazu