Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Mitsuru Sekiguchi

Hisashi Ogawa

Isao Miyanaga

Masanori Fukumoto

Yuka Terai

Shuji Hirao

Kazuhiko Hashimoto

Mikio Nishio

Toyokazu Fujii

Michinari Yamanaka

Shinichi Ogawa

Tatsuo Sugiyama

Kikuko Tsutsumi

A lower carbon film as a provisional film, a lower SiO film and an upper carbon film are formed, and then trenches having a wiring pattern are formed in the upper carbon film. Next, contact holes are formed through the lower carbon film and the lower SiO film. Then, wires and plugs are formed by filling in the trenches and contact holes with a barrier metal film and a Cu alloy film. After these process steps are repeatedly performed several times, a dummy opening is formed to extend downward through the uppermost SiO film. Thereafter, the carbon films are removed by performing ashing with oxygen introduced through the dummy opening. As a result, gas layers are formed to surround the wires and plugs. In this manner, a highly reliable gas-dielectric interconnect structure can be obtained by performing simple process steps.

Semiconductor device and method for fabricating the same

A lower carbon film as a provisional film, a lower SiO,film and an upper carbon film are formed, and then trenches having a wiring pattern are formed in the upper carbon film. Next, contact holes are formed through the lower carbon film and the lower SiO,film. Then, wires and plugs are formed by filling in the trenches and contact holes with a barrier metal film and a Cu alloy film. After these process steps are repeatedly performed several times, a dummy opening is formed to extend downward through the uppermost SiO,film. Thereafter, the carbon films are removed by performing ashing with oxygen introduced through the dummy opening. As a result, gas layers are formed to surround the wires and plugs. In this manner, a highly reliable gas-dielectric interconnect structure can be obtained by performing simple process steps.

Method for making semiconductor device containing low carbon film for interconnect structures

A method for fabricating a semiconductor device including a silicon region and a cobalt silicide film, the cobalt silicide film being in contact with at least a part of the silicon region. The method includes the steps of: doping at least part of the silicon region with boron by setting a doping level of boron in the part at 1.times.10.sup.15 cm.sup.-3 or more; depositing a cobalt film over a surface of the silicon region; conducting a first heat treatment for producing a silicidation reaction in a contact region between the cobalt film and the silicon region and thereby forming the cobalt silicide film; selectively removing unreacted portions of the cobalt film that have not been turned into silicide; and conducting a second heat treatment at a temperature higher than a temperature set for the first heat treatment step, thereby inducing a phase transition in the cobalt silicide film. The first heat treatment step is performed within a reducing ambient gas, and the temperature set for the first heat treatment step is in the range from about 400.degree. C. to about 600.degree. C., both inclusive.

Method for fabricating semiconductor device

After formation of a connection hole or before deposition of an insulator film, a semiconductor device is placed onto a cathode of a plasma generator. A surface of a metal silicide film such as a silicide of titanium is exposed to a plasma of a nitrogen-containing gas at 550 degrees centigrade or less. As a result of such processing, a barrier compound layer, composed of a compound of nitrogen, oxygen, metal and silicon, is formed at a near-surface region of the metal silicide film of the titanium silicide film. Thereafter, while forming a buried layer from material superior in step coverage such as an Al--Ti compound and an aluminum alloy, reaction between the metal silicide film and the buried layer in a later annealing treatment can be avoided without depositing a barrier metal such as a titanium nitride/nitride film in the connection hole. Accordingly, contact resistance, sheet resistance and junction leakage can be reduced and reliability can be improved.

Semiconductor device having improved lamination-structure reliability

On a semiconductor substrate, chips to be products and alignment chips located at a portion a part thereof is left out from a peripheral part of the semiconductor substrate are formed. Contact holes and alignment marks are formed at the chips to be products and the alignment chips. Covering the alignment chips with alignment mark cover parts of a substrate holder, a material for metal wiring is deposited on the semiconductor substrate to form a metal film on the substrate. A mask pattern is formed on the metal film using the alignment marks of the alignment chips on which the metal film is not formed.

Alignment chips positioned in the peripheral part of the semiconductor

Through exposure of the top surface of a tungsten film to plasma of a gas including nitrogen at a temperature of 550.degree. C. or less, a tungsten nitride layer having a structure in which nitrogen atoms and tungsten atoms are bonded is formed in an area in the vicinity of the surface of the tungsten film. Then, an aluminum alloy film is deposited on the tungsten film, thereby forming a metallic interconnection. Since the nitrogen atoms and the tungsten atoms are bonded in the tungsten nitride layer formed by such plasma nitridation, the tungsten nitric layer not only has a good barrier function to prevent the diffusion of other metal atoms but also can be formed in a small thickness. Accordingly, formation of an alloy layer with a high resistance otherwise caused due to counter diffusion during an annealing process and a junction leakage can be avoided.

Semiconductor apparatus with tungstein nitride

A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

Growing community of inventors

Kyoto, Japan

Mitsuru Sekiguchi