Seiko Epson Corporation

Mitsuru Sato

Takatoshi Yamamoto

Yoshiaki Mori

Shintaro Asuke

Ichio Yudasaka

Sumio Utsunomiya

Kazuhiro Gomi

Takuya Miyakawa

Yasutaka Matsumoto

Takashi Saiba

Satoshi Suzuki

Kenichi Takagi

Hideki Tanaka

A nozzle plate includes a nozzle open to one surface of the nozzle plate to eject ink, and a diamond-like carbon (DLC) layer disposed adjacent to the one surface. The DLC layer has surface irregularities including recesses and protrusions. The protrusions adjoining one another have ends to be in contact with the ink. The ends are located at mutually different positions in a direction intersecting the one surface.

Nozzle plate, liquid ejecting head, and liquid ejecting apparatus

A wiping member is configured to wipe a nozzle forming surface of a liquid ejecting head, which has nozzles through which a liquid is ejected, in a first direction. The wiping member includes a fibrous material and is configured to satisfy the following:&#x3bc;

Wiping member, liquid ejecting apparatus, wiping method in cleaning mechanism, and method of controlling liquid ejecting apparatus

An ink jet type recording head includes a substrate, a nozzle plate having nozzles, and a sealing sheet, and the substrate and the nozzle plate are bonded to each other through a bonding film, and the substrate and the sealing sheet are bonded to each other through a bonding film. These bonding films are each obtained by drying and/or curing a liquid material containing an epoxy-modified silicone material. Further, by applying energy to each bonding film, the surface thereof is activated, and therefore, each bonding film exhibits a bonding property. By this bonding property, the substrate is bonded to the nozzle plate and to the sealing sheet.

Liquid droplet ejection head and liquid droplet ejection apparatus

A bonding method of bonding two base members together through a bonding film is provided. The bonding method is a method for forming a bonded body in which a first base member and a second base member are bonded together through the bonding film. The bonding method includes: applying a liquid material containing a silicone material composed of silicone compounds onto a surface of at least one of the first and second base members to form a liquid coating on the surface; drying the liquid coating so that it is transformed into the bonding film on the surface of the at least one of the first and second base members; and applying energy to the bonding film so that a bonding property is developed in the vicinity of a surface thereof, to thereby bond the first and second base members together through the bonding film.

Bonding method and bonded body

A bonding method of bonding two base members together through a bonding film having a fine pattern at low cost, and a bonded body with the bonding film which is formed using the bonding method are provided. The bonding method is a method for forming a bonded body in which a first base member and a second base member are bonded together through a bonding film having a predetermined pattern. The bonding method includes: applying a liquid material containing a silicone material composed of silicone compounds onto a surface of at least one of the first and second base members using a liquid droplet ejecting method, to form a liquid coating having a pattern corresponding to the predetermined pattern on the surface; drying the liquid coating so that it is transformed into the bonding film having the predetermined pattern on the surface of the at least one of the first and second base members; and applying energy to the bonding film so that a bonding property is developed in the vicinity of a surface thereof, to thereby bond the first and second base members together through the bonding film.

A separating method of a bonded body, the bonded body including two base members and a bonding film through which the base members are boded together, enabling to easily and efficiently separating the bonded body into the two original base members is provided. Further, the bonding film contains a silicone material composed of silicone compounds. The separating method includes: preparing the bonded body with the bonding film; and applying energy for separation to the bonding film so that cleavage is generated within the bonding film due to breakage of a part of molecular bonds of the silicone compounds, to thereby separate the bonded body into the first and second base members.

Separating method of bonded body

There is provided a method for disassembling a bonded structure obtained by bonding a first base member and a second base member to each other via a bonding film mainly made of a compound having a branched polyorganosiloxane skeleton having a structural unit expressed by a following general formula (1) at a terminal portion, a structural unit expressed by a following general formula (2) at a linking portion, and a structural unit expressed by a following general formula (3) at a branched portion: In the formulas, each R independently represents a non-substituted hydrocarbon group; each Z independently represents a hydroxyl group or a hydrolytic group; each X represents a siloxane residue; a represents 0 or an integer of 1 to 3; b represents 0 or an integer of 1 or 2; and c represents 0 or 1. The disassembling method includes heating the bonding film into a molten state at a temperature equal to or higher than a glass transition point of the compound having the branched polyorganosiloxane skeleton and separating the first and the second base members from each other.

Method for disassembling bonded structure

A method for manufacturing a semiconductor device, comprises providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source.

Apparatus and method for manufacturing semiconductor device, and electronic apparatus

A method of forming a bonded body comprised of a first base member, a second base member, and a first bonding film and a second bonding film provided between the first base member and the second base member is provided. The first bonding film and the second bonding film are constituted of copper and an organic component, and an amount of copper contained in each of the first bonding film and the second bonding film is 80 atom % or higher but lower than 90 atom % at an atomic ratio. The method is comprised of: forming the first bonding film on the first base member by using a chemical vapor-film formation method; forming the second bonding film on the second base member by using a chemical vapor-film formation method; bringing the first bonding film formed on the first base member into contact with the second bonding film formed on the second base member so that the first bonding film faces the second bonding film; and applying a compressive force to the first base member and the second base member so that the first bonding film and the second bonding film are bonded together to thereby obtain the bonded body. Two base members can be firmly and efficiently bonded together with high dimensional accuracy at a low temperature, and the two base members can be efficiently separated (peeled off) to each other after use of the bonded body. Further, a bonded body is also provided.

Method of forming bonded body and bonded body

A method of forming a bonded body comprised of a first base member, a second base member, and a first bonding film and a second bonding film provided between the first base member and the second base member is provided. The first bonding film and the second bonding film are constituted mainly of copper. The method is comprised of: forming the first bonding film on the first base member by using a chemical vapor-film formation method; forming the second bonding film on the second base member by using a chemical vapor-film formation method; bringing the first bonding film formed on the first base member into contact with the second bonding film formed on the second base member so that the first bonding film faces the second bonding film; and applying a compressive force to the first base member and the second base member so that the first bonding film and the second bonding film are bonded together to thereby obtain the bonded body. Two base members can be firmly and efficiently bonded together with high dimensional accuracy at a low temperature, and the two base members can be efficiently separated (peeled off) to each other after use of the bonded body. Further, a bonded body is also provided.

A method of forming a bonded body comprised of a first base member, a second base member, and a first bonding film and a second bonding film provided between the first base member and the second base member is provided. The first bonding film and the second bonding film are constituted of copper and an organic component, and an amount of copper contained in each of the first bonding film and the second bonding film is 90 atom % or higher but lower than 99 atom % at an atomic ratio. The method is comprised of: forming the first bonding film on the first base member by using a chemical vapor-film formation method; forming the second bonding film on the second base member by using a chemical vapor-film formation method; bringing the first bonding film formed on the first base member into contact with the second bonding film formed on the second base member so that the first bonding film faces the second bonding film; and applying a compressive force to the first base member and the second base member so that the first bonding film and the second bonding film are bonded together to thereby obtain the bonded body. Two base members can be firmly and efficiently bonded together with high dimensional accuracy at a low temperature, and the two base members can be efficiently separated (peeled off) to each other after use of the bonded body. Further, a bonded body is also provided.

A method for fabricating a semiconductor device, comprising: forming a semiconductor film on a substrate; and recrystallizing the semiconductor film using as a heat source flame of a gas burner that uses hydrogen and oxygen gas mixture as a fuel.

Method of fabricating semiconductor device and method for fabricating electronic device

The present invention provides a semiconductor device fabrication method capable of reducing the thermal load on the substrate. The present invention also provides a semiconductor device fabrication method capable of improving the characteristics of a semiconductor element. The semiconductor device fabrication method according to the present invention comprises a step of thermally processing a semiconductor layer that is deposited on a substrate by using, as a heat source, the flame of a gas burner that uses a mixed gas of hydrogen and oxygen as fuel. As a result of thermal processing, the semiconductor layer is re-crystallized and an oxide film is formed on the surface of the semiconductor layer. The oxide film can be used as a gate insulation film and a capacitive insulation film.

Semiconductor device fabrication method and electronic device fabrication method

Method of forming a multilayer interconnection structure that includes a contact hole for reliably connecting between layers, without damaging a substrate. A column shaped mask material is formed in a position for forming a contact hole using a resist, and an interlayer insulating film is applied to the whole surface of the substrate excluding the mask material. Then, the mask material is removed by a method such as peeling. As a result, a hole generated thereby is used as a contact hole.

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Suwa, Japan

Mitsuru Sato