Mitsui Chemicals, Inc.

Mitsui Chemicals Tohcello, Inc.

Mitsuru Sakai

Eiji Hayashishita

Katsutoshi Ozaki

Seiichi Kobayashi

Akinori Ryu

Yoshimitsu Aiiso

Makoto Kataoka

Yoshihisa Saimoto

Setsuko Oike

Hiroyuki Kamio

Yoshiharu Kobayashi

The plastic polarized lens () of the present invention contains a polarized film () and layers (resin layers) (and) comprising a thiourethane-based resin stacked over both surfaces of the polarized film (), and the polarized film contains an organic coloring compound represented by the following general formula (1). 

Plastic polarized lens, method for producing the same, and polarized film

To provide an olefinic expandable substrate and a dicing film that exhibits less contamination characteristics, high expandability without necking, which cannot be achieved by conventional olefinic expandable substrates. In order to achieve the object, an expandable film comprises a 1-butene-&#x3b1;-olefin copolymer (A) having a tensile modulus at 23&#xb0; C. of 100 to 500 MPa and a propylenic elastomer composition (B) comprising a propylene-&#x3b1;-olefin copolymer (b1) and having a tensile modulus at 23&#xb0; C. of 10 to 50 MPa, wherein the amount of the component (B) is 30 to 70 weight parts relative to 100 weight parts in total of components (A) and (B).

Expandable film, dicing film, and method of producing semiconductor device

To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25&#xb0; C., E(25), of 1 GPa or more; a resin layer A that satisfies the condition E(60)/E(25)&#x3c;0.1, where E(25) is a tensile elasticity at 25&#xb0; C. and E(60) is a tensile elasticity at 60&#xb0; C., the E(60) ranging from 0.005 MPa to 1 MPa; and a resin layer B having a tensile elasticity at 60&#xb0; C., E(60), of 1 MPa or more and having a thickness of 0.1 &#x3bc;m to less than 100 &#x3bc;m, the E(60) being larger than the E(60) of the resin layer A.

Sheet for protecting surface of semiconductor wafer, semiconductor device manufacturing method and semiconductor wafer protection method using sheet

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Kisarazu, Japan

Mitsuru Sakai