Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Tohoku Techno Arch Co., Ltd.

Mitsuru Okigawa

Takashi Noma

Hiroyuki Shinogi

Katsuhiko Kitagawa

Takayasu Otagaki

Nobuyuki Takai

Ryoji Tokushige

Ryu Shimizu

Tatsuya Ando

Hiroshi Yamada

Kazuo Okada

Shinzo Ishibe

Kazuhiro Sasada

Yuichi Morita

Makoto Izumi

Noboru Okubo

Shigeki Otsuka

Tetsuya Miwa

Naoteru Matsubara

Seiji Samukawa

Hisashi Matsuyama

Hayato Nakashima

Takayuki Kaida

Tatsuhiko Koide

Tadashi Shinmura

Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.

Method of manufacturing semiconductor device with wiring on side surface thereof

The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

Semiconductor device

This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

Semiconductor device and manufacturing method of the same

An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power source unit for supplying power to them. The on-wafer data I/O unit is connected to a laser diode (LD) and a photo diode (PD) which are optical I/O units installed outside. The data I/O unit receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer, a VUV photon detector, and a radical ion species emission spectrophotometer.

On-wafer monitoring system

A solid-state image pickup device improvable in photosensitivity also in the vicinity of an end of a substrate is provided. This solid-state image pickup device comprises a photodetection part formed on a substrate, a color filter layer and a lens, formed between the substrate and the color filter for condensing light on the photodetection part, having a lens center deviated from the center of the photodetection part by a prescribed distance.

Solid state image pickup device comprising lenses for condensing light on photodetection parts

Semiconductor device with holding member

Semiconductor device with sidewall wiring

A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

A semiconductor integrated device, provided with a semiconductor chip on which a semiconductor integrated circuit is formed and a support substrate laminated on at least one surface of the semiconductor chip, wherein the semiconductor chip and the support substrate are fastened using resin having particle-the minimum film thickness of the resin is larger than the maximum particle diameter of the filler.

Semiconductor integrated device including support substrate fastened using resin, and manufacturing method thereof

A solid-state imaging apparatus allowing miniaturization in a structure having a lens provided between a substrate and a color filter layer is provided. This solid-state imaging apparatus comprises a photodetection part formed on the substrate, the color filter layer formed on the substrate and the lens formed between the substrate and the color filter layer for concentrating light on the photodetection part. The lens has an upwardly projecting upper surface portion, while the upper end of the upper surface portion substantially comes into contact with the lower surface of the color filter layer.

Solid-state imaging apparatus

A charge-coupled device capable of attaining excellent performance with a single-layer gate electrode structure is obtained. This charge-coupled device, having a single-layer gate electrode structure, comprises a gate insulator film formed on a semiconductor substrate, a plurality of partitions, consisting of an insulator, formed on the gate insulator film, and concave gate electrodes, arranged between adjacent ones of the partitions, having side surfaces formed along side portions of the partitions. Thus, when the partitions are formed with a width of not more than the minimum critical dimension of lithography, the interval between the adjacent gate electrodes is not more than the minimum critical dimension of lithography.

Charge-coupled device and method of fabricating the same

A solid state image device capable of attaining high condensability also when integrating an optical lens and a solid state image sensor with each other is provided. This solid state image device comprises an optical lens, a solid state image sensor including a microlens, and a resin layer formed between the optical lens and the microlens of the solid state image sensor. Thus, the solid state image device can refract light incident upon the microlens from the resin layer also when the resin layer is formed between the solid state image sensor and the optical lens.

Solid state image device and including an optical lens and a microlens

A semiconductor integrated device that resists breakage of an internal wire. An epoxy resin covers a lower surface and side surface of a semiconductor chip. An internal pad connecting an external wire and an internal wire are formed on a silicon oxide film. The internal pad is wider than the internal wire. A portion at which the internal pad and the internal wire are connected to each other is located above the semiconductor chip. The internal pad disperses stress resulting from changes in the volume of the epoxy resin caused by temperature changes. Accordingly, stress does not concentrate in the internal wire.

Growing community of inventors

Nagoya, Japan

Mitsuru Okigawa