Rohm Co., Ltd.

Mitsuru Okazaki

Naoki Takahashi

Akira Shimizu

Youichi Kajiwara

Kenichi Nakata

A semiconductor integrated circuit device includes: a rectangular shaped semiconductor substrate; a metal wiring layer formed on or over the semiconductor substrate; and a passivation layer covering the metal wiring layer. A corner non-wiring region where no portion of the metal wiring layer is formed is disposed in a corner of the semiconductor substrate. A slit is formed in a portion of the metal wiring layer which is close to the corner of the semiconductor substrate. The passivation layer includes a first passivation layer which is formed on the metal wiring layer and a second passivation layer which is formed on the first passivation layer. The first passivation layer is formed of a material that is softer than a material of the second passivation layer.

Semiconductor integrated circuit device

In a protection circuit connected, via lines including an inductance component, to a circuit to be protected, a first transistor is arranged on a path to ground from a connection point of the protection circuit and the line. A second transistor is arranged on a path to ground from a connection point of the circuit to be protected and the line, and extracts, from a connection point, a current corresponding to a current flowing in the first transistor. The first and the second transistors are NPN bipolar transistors having a base and an emitter are commonly connected. A resistor is connected between the base and the emitter of the first transistor, and a diode is connected between the base and a collector.

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Kyoto, Japan

Mitsuru Okazaki