Kabushiki Kaisha Toshiba

Mitsuru Oida

Masatoshi Fukuda

Yasuhiro Koshio

Hiroshi Funakura

Eiichi Hosomi

Junya Nagano

Atsushi Kurosu

Tetsuya Nagaoka

Osamu Yamagata

Kaoru Kawai

Katsuya Murakami

Koichi Sugihara

Kiichiro Higaki

Shigenori Sawachi

A semiconductor device includes a semiconductor chip of a multilayer wiring structure having an insulating film formed on a surface thereof, multiple electrode pads formed at a central part and an outer peripheral part of the insulating film, and multiple protective metal layers formed respectively on the electrode pads. The semiconductor device also includes a substrate having the semiconductor chip mounted thereon and including multiple substrate terminals formed on a surface thereof respectively in positions corresponding to the electrode pads. The semiconductor chip is mounted on the substrate by connecting a stud bump to a solder bump. The stud bump is formed on any one of each of the protective metal layers and each of the substrate terminals and the solder bump is formed on the other one of each of the protective metal layers and each of the substrate terminals.

Semiconductor device with multilayer wiring structure formed within and method of manufacturing the same

A semiconductor package includes (a) an interposer, (b) a wiring layer containing conductors formed adjacent to each other at intervals that cause no short circuit among the conductors, the wiring layer covering a given area of the interposer, to block light from passing through the given area, (c) a light blocking layer covering a no-wiring area of the interposer not covered by the wiring layer, to block light from passing through the no-wiring area, (d) a semiconductor chip electrically connected to the wiring layer, and (e) a resin mold sealing the wiring layer, the light blocking layer, and the semiconductor chip.

Semiconductor package

A semiconductor package has (a) a package base, (b) package terminals formed on the package base and used to connect the semiconductor package to another device, (c) a wiring layer formed on the package base and electrically connected to the package terminals, (d) a semiconductor chip mounted on the package base and electrically connected to the wiring layer, (e) a low-elasticity resin layer formed between a resin mold and the wiring layer and between the package base and the resin mold, and (f) the resin mold sealing the package base, the wiring layer, the semiconductor chip, and the low-elasticity resin layer.

Semiconductor package and method of manufacturing the same

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Kanagawa-ken, Japan

Mitsuru Oida