National Institute of Advanced Industrial Science and Technology

Mitsuru Itoh

Hiroshi Takashima

Naoki Shirakawa

Akira Shoji

Ruiping Wang

Yoshiyuki Inaguma

Noboru Miura

Kazushige Ueda

There are provided a perovskite oxide thin film EL element in which a hole transport layer/a light-emitting layer/an electron transport layer comprising a perovskite oxide thin film are formed on a lower electrode, and an upper electrode is formed thereon, and a perovskite oxide thin film EL element that provides red light emission in the vicinity of a wavelength of 610 nm, which is the basis of display making. A perovskite oxide thin film EL element comprising a lower electrodecomprising a polished single crystal substrate, an electron transport layercomprising a perovskite oxide thin film, which is a dielectric, formed on the lower electrode, a light-emitting layercomprising a perovskite oxide thin film formed on the electron transport layer, a hole transport layercomprising a perovskite oxide thin film, which is a dielectric, formed on the light-emitting layer, a buffer layerformed on the hole transport layer, and a transparent upper electrodeformed on the buffer layer

Perovskite oxide thin film EL element

A capacitance temperature sensor in which temperature is measured by detecting capacitance of a parallel plate condenser which comprises a dielectric material comprising strontium titanate single crystal in which (a) 30% by weight or less of oxygen-or (b) 30% by weight to 50% by weight of oxygen-is substituted with oxygen-isotope.

Capacitance temperature sensor and temperature measuring device

Growing community of inventors

Tsukuba, Japan

Mitsuru Itoh