Sony Semiconductor Solutions Corporation

Mitsuru Ishikawa

Yuichi Seki

Yuuji Nishimura

Masaya Shimoji

Kouichi Itabasi

Yoichi Ootsuka

Yoshiaki Kitano

Toyomi Jinwaki

Yosuke Takita

Takafumi Nishi

Takashi Nakashikiryo

Ryou Chiba

The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.

Solid-state imaging element and method for manufacturing the same, and electronic device

The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

Growing community of inventors

Kumamoto, Japan

Mitsuru Ishikawa