Renesas Technology Corp.

Hitachi, Ltd.

Renesas Electronics Corporation

Hitachi Ulsi Systems Co., Ltd.

Other

Hitachi Device Engineering Co., Ltd.

Hitachi Displays, Ltd.

Renesas Northern Japan Semiconductor, Inc.

Mitsuru Hiraki

Takayasu Ito

Masashi Horiguchi

Shoji Shukuri

Toshihiro Tanaka

Yutaka Shinagawa

Masamichi Fujito

Takashi Yamaki

Nozomu Matsuzaki

Yoshiaki Kamigaki

Shinichi Minami

Kozo Katayama

Kazufumi Suzukawa

Hiroyuki Tanikawa

Yukiko Umemoto

Koichi Ashiga

Hiroyuki Mizuno

Kazuo Yano

Takao Watanabe

Hitoshi Tanaka

Kenichi Fukui

Hajime Akimoto

Takahiro Miki

Yoshiyuki Kaneko

Yoshiro Mikami

Makoto Tsumura

Takashi Akioka

Shinya Sano

Yohei Akita

Hitoshi Nakahara

Naoki Katoh

Atsushi Kiuchi

Tadashi Kameyama

Satoshi Baba

Toyohiro Shimogawa

Kesami Hagiwara

Masataka Minami

Katsuhiro Shimohigashi

Masaharu Kubo

Atsuo Watanabe

Yuichi Okuda

Masaru Kokubo

Yasuhiko Sasaki

Koichi Seki

Kouki Noguchi

Tatsuji Matsuura

Takahiro Nagano

Kazushige Sato

Hisayuki Higuchi

Naoki Yada

Masao Hotta

Makoto Suzuki

Keiichi Yoshizumi

Eiichi Ishikawa

Yuji Hatano

Kan Takeuchi

Suguru Tachibana

Mitsuhiko Okutsu

Hirotsugu Kojima

Ryuichi Izawa

Takafumi Kikuchi

Isao Nakamura

Kouichi Seki

Syuji Ikeda

A semiconductor device includes a plurality of nonvolatile memory cells (). Each of the nonvolatile memory cells comprises a MOS type first transistor section () used for information storage, and a MOS type second transistor section () which selects the first transistor section. The second transistor section has a bit line electrode () connected to a bit line, and a control gate electrode () connected to a control gate control line. The first transistor section has a source line electrode () connected to a source line, a memory gate electrode () connected to a memory gate control line, and a charge storage region () disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc&#x3c;tm.

Semiconductor device

A voltage generating circuit, in which the influence of offset of an amplifier on an output voltage is reduced, has first and second bipolar transistors (Q, Q) having emitter terminals at the same electric potential. A base terminal of Qis disposed on a collector side of Q. A first resistance element connects the collector side of Qwith the base side of Q; and a second resistance element (R) connects a collector side of Qto R. A third resistance element (R) connects a base terminal of Qwith the electric potential of the emitter terminals. An amplifier (A) outputs a voltage based on a voltage difference between the collector sides of Qand Q; and a voltage-current converting section (MP, MP) converts amplifier output into a current supplied to the connection node of Rand R. A voltage is then output on the basis of the generated current.

Voltage generating circuit

A semiconductor integrated circuit device with reduced consumption current is provided. A first step-down circuit stationarily forms internal voltage lower than supply voltage supplied through an external terminal. A second step-down circuit is switched between first mode and second mode according to control signals. In first mode, the internal voltage is formed from the supply voltage supplied through the external terminal and is outputted through a second output terminal. In second mode, operating current for a control system that forms the internal voltage is interrupted and an output high impedance state is established. The first output terminal of the first step-down circuit and the second output terminal of the second step-down circuit are connected in common, and the internal voltage is supplied to internal circuits.

Semiconductor integrated circuit device

An integrated circuit formed on a semiconductor chip includes voltage regulators for stepping down an externally-supplied power voltage to produce an internal power voltage, and internal circuits which operate based on the internal power voltage. The voltage regulators are laid in the area of the buffers and protective elements for the input/output signals and power voltages so that the overhead area due to the on-chip provision of the voltage regulators is minimized. The internal power voltage is distributed to the internal circuits through a looped main power line, with an electrode pad for connecting an external capacitor for stabilizing the internal power voltage being provided on it, so that the internal power voltage is stabilized and the power consumption of the integrated circuit is minimized.

Semiconductor integrated circuit

Occurrence of power supply noise arising in connection with a step-down action at the time of turning on power supply is to be restrained. A step-down unit is provided with a switched capacitor type step-down circuit and a series regulator type step-down circuit, and stepped-down voltage output terminals of the step-down circuits are connected in common. The common connection of the stepped-down voltage output terminals of both step-down circuits makes possible parallel driving of both, selective driving of either or consecutive driving of the two. In the consecutive driving, even if the switched capacitor type step-down circuit is driven after driving the series regulator type step-down circuit first to supply a stepped-down voltage to loads, the switched capacitor type step-down circuit will need only to be compensated for a discharge due to the loads, and a peak of a charge current for capacitors can be kept low. When operation of the switched capacitor type step-down circuit is started, no large rush current arises, and occurrence of noise is restrained.

Semiconductor circuit device and data processing system

Growing community of inventors

Kodaira, Japan

Mitsuru Hiraki