Nichia Corporation

Kyoto University

Other

Sharp Kabushiki Kaisha Corporation

California Institute of Technology

Ushio Denki Kabushiki Kaisha

Mitsuru Funato

Yoichi Kawakami

Axel Scherer

Isamu Niki

Koichi Okamoto

Shigeo Fujita

Yukio Narukawa

Tatsuya Morioka

Shizuo Fujita

Hiroshige Hata

Hajime Saito

Masanori Yamaguchi

Ken Kataoka

Masafumi Harada

Kunimichi Omae

Tsuneaki Hashimoto

Katsuhiro Kishimoto

Kyoko Fujita, Legal Representative

Akio Kaneta

Katsuhito Nishimura

Ryan Ganipan Banal

Takao Oto

A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.

Method of forming p-type nitride semiconductor layer

Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InAlGaN (0&#x2266;x&#x3c;1, 0&#x3c;y&#x2266;1, x+y&#x2266;1), and the active layer of the semiconductor multi-layered film element is irradiated with an electron beam from the electron beam irradiation source. This allows the semiconductor multi-layered film element to emit ultraviolet radiation out of the vessel through the ultraviolet transmitting window. Furthermore, Equation (1) below is satisfied,4.18&#xd7;10.6&#xd7;&#x2003;&#x2003;Equation (1)where V (kV) is the acceleration voltage of the electron beam and t (nm) is the thickness of the active layer.

Ultraviolet irradiation apparatus

A scanning probe microscope includes: a first and second probes for scanning a sample while maintaining the distance to the sample surface; crystal oscillators holding each of the first and second probes; and a modulation oscillator for providing the first probe with a vibration of a specific frequency which is different from the resonant frequency of each crystal oscillator. A control unit monitors the vibration of the specific frequency of the first and second probes, detects proximity of the first probe and the second probe to each other based on the change of the specific frequencies, and controls the drive of the first and second probes.

Scanning probe microscope and method for detecting proximity of probes thereof

A fluorescent material excellent in emission efficiency in white emission and a light-emitting apparatus employing this fluorescent material and having excellent color rendering are provided with a fluorescent material comprising a two-layer structure of a core of a particle size having a quantum effect and a shell covering this core in which the ground state energy of the core is in the range of 1.85 to 2.05 eV, the high order energy of the core is not in the ranges of 2.3 to 2.5 eV and 2.65 to 2.8 eV, or the ground state energy of the core is in the range of 2.3 to 2.5 eV, the high order energy of the core is not in the range of 2.65 to 2.8 eV an light-emitting apparatus employing these fluorescent materials.

Fluorescent material having two layer structure and light emitting apparatus employing the same

The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recessesare formed by etching in the first electrically conductive (n) type semiconductor layerformed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.

Nitride semiconductor device, and its fabrication process

The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.

Nitride semiconductor device and a process of manufacturing the same

Growing community of inventors

Kyoto, Japan

Mitsuru Funato