Omron Corporation

Mitsuru Fujii

Kenji Sakurai

Tomonori Seki

Shobu Sato

Minoru Sakata

Masakazu Shiinoki

Fixed contacts ( A, A) are provided on the upper surface of a silicon substrate ( ). Signal lines ( ) electrically continuous with the fixed contacts ( A, A) are provided so as to pass through a silicon substrate ( ) from the obverse surface to the reverse surface thereof. Bumps ( ) electrically continuous with the signal lines ( ) are provided on the reverse surface of the silicon substrate ( ). A fixed electrode ( ) is provided on both sides of the fixed contacts ( A, A). Wiring conductors ( ) electrically continuous with the fixed electrode ( ) are provided so as to pass through the silicon substrate ( ) from the obverse surface to the reverse surface thereof. Bumps ( ) electrically continuous with the wiring conductors ( ) are provided on the reverse surface of the silicon substrate ( ). Through holes ( ) of the silicon substrate ( ) through which the signal lines ( ) are passed and through holes ( ) of the silicon substrate ( ) through which the wiring conductors ( ) are passed are hermetically sealed by a movable substrate ( ) or a cap ( ).

Static relay and communication device using static relay

A semiconductor device is provided that simplifies wiring pattern and is capable of being etched through an etching hole as a concavity is produced over a short time period. A dielectric film is formed so as to shield the concavity formed upon the upper surface of a silicon substrate . A circuit pattern that has a thermoelectric conversion element is formed upon the dielectric film. The upper surface of the silicon wafer becomes a (100) surface, and a first etching hole extending in the <110> direction of the silicon substrate and a second etching hole extending in the <&minus;110> direction are formed. These holes intersect in a cross shape. Shapes of the first and second etching holes become parallelograms which have oblique sides tilted with respect to <110> and <&minus;110>. Imaginary rectangles passing though the vertices of the first and second etching holes are continuous. As a cross shape is removed from the silicon substrate, etching is rapid due to the appearance of (411) surfaces at the intersecting part.

Growing community of inventors

Kyoto, Japan

Mitsuru Fujii