Fujitsu Corporation

Mitsuru Chida

Michiko Takei

Yasuyoshi Mishima

Kohta Yoshikawa

A current path pattern of semiconductor material is formed on the insulating principal surface of a substrate. A gate pattern three-dimensionally crosses the current path pattern in first and second cross areas. A channel region of the current path pattern is defined in an area superposed upon by the gate pattern. A gate insulating film is disposed between the current path pattern and gate pattern. The current path pattern has a lightly doped drain structure on both sides of the channel region in the first cross area, and is not provided with the lightly doped drain structure in regions in contact with the channel region in the second cross area. TFTs are provided having a small off-current and being not necessary for high precision position alignment during manufacture processes even if a gate length is short.

Thin film transistor, liquid crystal display substrate, and their manufacture methods

A liquid crystal display substrate including gate and drain bus lines that are electrically insulated from each other at cross areas, pixel electrodes between the cross areas, and first thin film transistors connecting corresponding drain bus lines and pixel electrodes. Each first thin film transistor includes a channel region where current flows in a first direction, and first and second impurity doped regions of, respectively, first and second impurity concentrations. The first and second doped regions sandwich the channel region. The second impurity concentration is higher than the first. Also, a second thin film transistor is formed in the peripheral circuit area, and includes a channel region where current flows in a second direction that is perpendicular to the first direction. Third impurity doped regions, disposed on both sides of the channel region, have a third impurity concentration.

Growing community of inventors

Kawasaki, Japan

Mitsuru Chida