Hitachi, Ltd.

Mitsuo Yanagi

Motohisa Funabashi

Akira Maeda

Mikio Yoda

Hiromasa Yamaoka

Nobuyuki Fujikura

Takahiro Nagano

Tsutomu Yatsuo

Jin Onuki

Hiroaki Hachino

Yasutoshi Kurihara

Masayoshi Naito

Fumio Sato

Yoshihiro Suzuki

Michio Ooue

Tomio Yasuda

Toshihide Ichimori

An information processing apparatus, which is easy to design and has functions of high speed processing, learning, and so on, includes a plurality of memories for storing sets of previously known input data (called response pattern data) and correct output data corresponding thereto; a comparator for providing input data supplied in actual operations to the plurality of sets and comparing the input data with the response pattern data in each set; an evaluation unit for evaluating the distance (degree of similarity) between the input data and the response pattern data; and a generator for generating final outputs by composing the evaluation result for each set and the output data in that set, for example, using a method which calculates weighted average values based on the evaluated distances.

Information processing apparatus for obtaining output data from plural

An information processing apparatus is capable of achieving high-level functions such as high-speed processing and learning without requiring a complex algorithm based on, for example, knowledge processing. A plurality of sets of known input data and correct output data corresponding thereto are beforehand stored. The stored input data is called response pattern data. Data actually inputted in the system operation is supplied to the plural sets of data. For each set of data, the input data is compared with the response pattern data to evaluate a distance (degree of similarity) therebetween. Results of evaluations for the respective sets of data are combined with the associated output data, for example, according to weighted average values on the basis of the evaluated distance, thereby generating final outputs.

Information processing apparatus and monitoring apparatus

In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients .alpha..sub.I and .alpha..sub.S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole .alpha..sub.M is adjusted in a range between .alpha..sub.I and .alpha..sub.S.

Insulated type semiconductor devices

A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external control signal to a gate electrode takes the form of a closed-loop shape and the majority of emitter regions are arranged on both sides of the loop. This arrangement ensures that the individual emitter regions, even when the number of the emitter regions is increased to a great extent, can be applied with a uniform control signal, thereby preventing degradation of the turn-off characteristics.

Semiconductor devices of multi-emitter type

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Takahagi, Japan

Mitsuo Yanagi