Shin-etsu Chemical Co., Ltd.

Mitsuo Umemura

Minoru Takamizawa

Jun Hatakeyama

Toshinobu Ishihara

Kunio Itoh

Satoshi Okazaki

Akira Hayashida

Yoshihumi Takeda

Kazuhiro Nishikawa

Kazuo Kooya

Masato Kanari

Satoshi Watanabe

Eiichi Tabei

Tetsuya Inukai

Taishi Kobayashi

Hiroshi Kanbara

Haruo Okamoto

Miki Kobayashi

Masaru Kobayashi

Hirohumi Kishita

A resist pattern is formed on a substrate by forming a water-soluble resist film on the substrate, forming a contrast enhancing film on the resist film from a contrast enhancing composition comprising a specific arylnitrone compound of formula (1), pre-baking the resist film before or after formation of the contrast enhancing film, exposing the resist film to light through the contrast enhancing film, baking the films after exposure, removing the contrast enhancing film after the baking step, and developing the resist film. The process forms a resist pattern having a fully rectangular profile and an improved focus margin. The conventional apparatus can be utilized without substantial modification, achieving a cost reduction. ##STR1## wherein R.sup.1, R.sup.2, and R.sup.3 are independently an alkyl radical, an aryl radical or a hydrogen atom, R.sup.4 to R.sup.8 are independently an alkyl radical, a hydrogen atom or a carboxyl radical, at least one of R.sup.4 to R.sup.8 being a carboxyl radical, X is a hydrogen atom, an alkoxy radical represented by R.sup.9 O--, or a dialkylamino radical represented by R.sup.10 R.sup.11 N-- wherein R.sup.9 is an alkyl radical, R.sup.10 and R.sup.11 are independently an alkyl radical, and letter n ha a value of 0, 1 or 2.

Method for forming resist pattern with enhanced contrast film

A positive resist composition contains (1) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-10,000 as an alkali-soluble resin, (2) a low nucleus compound having a phenolic hydroxyl group and 2-5 benzene rings as a dissolution promoter, and (3) a compound having a 1,2-naphthoquinonediazidosulfonyl group in a molecule and a degree of esterification of at least 65% as a photosensitive agent. By forming a resist layer on a substrate from the positive resist composition, and baking the resist layer at 100.degree.-130.degree. C. before exposure or before development, followed by exposure and development, there is formed a resist pattern having a micro-groove of desired configuration. This resist pattern lends itself to a lift-off technique.

Positive resist composition suitable for lift-off technique and pattern

The invention provides an anti-reflective material comprising a salt of a carboxyl-terminated fluorinated alkyl polyether compound with a water-soluble amino compound. A resist pattern is defined by forming anti-reflective layer of the anti-reflective material on a photoresist layer, exposing the photoresist layer to a desired pattern of light, removing the anti-reflective layer, and developing the photoresist layer. A fine resist pattern having improved dimensional and alignment accuracies can be defined in a simple, efficient, reproducible manner without substantial environmental pollution. The invention is advantageously utilized in photo-lithography using photoresists.

Anti-reflective material and patterning method

In a resist composition, a novolak resin including at least one recurring unit of the formula (1): ##STR1## wherein n is an integer of 1 to 4 and m is an integer of 0 to 3, having a weight average molecular weight of 1,000 to 10,000 calculated as polystyrene, and having the hydrogen atom of a hydroxyl group therein replaced by a 1,2-naphthoquinonediazidosulfonyl group in a proportion of 0.03 to 0.27 mol per hydrogen atom serves as an alkali-soluble resin and a photosensitive agent. The composition is uniform in that the photosensitive agent is uniformly incorporated in the novolak resin, and thus forms a uniform resist film. It is a useful positive resist having improved sensitivity, resolution, heat resistance, and film retentivity.

Resist compositions

Organic silicon compounds comprising in the molecule thereof, a polysilane structural unit: -(R.sup.1 R.sup.2 Si).sub.n - and a structural unit: R.sup.3.sub.a SiO.sub.(4-a)/2 absorb UV in the range of 300-400 nm and are well soluble in organic solvent. These compounds are useful UV absorbers for cosmetic compositions.

Silicone UV absorbers containing silane units

A foamable silicone rubber composition, comprising:

Foamable silicone rubber composition

A process for manufacturing an organic silazane polymer which comprises reacting ammonia with a mixture of methyldichlorosilane, methyltrichlorosilane and dimethyldichlorosilane to obtain an ammonolysis product. The ammonolysis product is polymerized in the presence of a basic catalyst capable of deprotonation to obtain an organic silazane polymer. The silazane polymer may be further melted, shaped and infusibilized. The thus infusibilized product is finally sintered to obtain a ceramic material.

Process for manufacturing organic silazane polymers and process for

The invention provides a novel and efficient method for the preparation of methyl hydrogensilanes, e.g. dimethyl silane, 1,1,2,2-tetramethyl disilane and 1,1,2,2,3,3-hexamethyl trisilane, with large demand in the industry of silicones as an intermediate for the synthesis of other valuable organosilicon compounds such as methyl hydrogenchlorosilanes. The inventive method comprises pyrolysis of a methyl polysilane composed of at least 60% by moles of dimethylsilicon units, the balance being monomethyl- and trimethylsilicon units, at a temperature in the range from 350.degree. to 800.degree. C.

Method for the preparation of methyl hydrogensilanes

An ethylenic hydrocarbon is reacted with carbon tetrachloride in the presence of an alkyl phosphite, an iron chloride and a nitrile compound. According to this process, tetrachloroalkanes having more than two carbon atoms can be obtained in high yields.

Process for the preparation of tetrachloroalkanes

Fluoroalkylsilanes of the general formula R'CH.sub.2 CH.sub.2 SiR.sub.n X.sub.3-n are prepared by reaction of an organohydrogensilane of the general formula R.sub.n SiHX.sub.3-n with a fluoroolefin of the general formula R'CH.dbd.CH.sub.2, where R is an alkyl or aryl group, R' is a perfluoroalkyl group, X is a halogen atom or an alkoxy group and n is 0, 1 or 2 in the presence of a binary catalyst composed of a platinum compound and stannous chloride under relatively mild conditions of temperature and pressure, at a very high yield.

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Usui-gun, Japan

Mitsuo Umemura