Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Mitsuo Tanaka

Tsuneichiro Sano

Masaki Inoue

Shinya Natsume

Osamu Matsui

A semiconductor device includes: an active layer that is located in an SOI substrate, and in which an element included in a circuit is formed; a buried insulation layer that is located in the SOI substrate, and is in contact with the active layer; a deep trench isolation (DTI) region that is formed in the active layer to surround a whole formation region of the element in plan view, and extends from an upper surface to a lower surface of the active layer; and a first conductive film formed above the element. The DTI region has a first hole inside, and a film thickness of the first conductive film is greater than a thickness of the active layer.

Semiconductor device

A semiconductor device according to the present invention includes a p-type semiconductor substrate, a first n-type collector diffusion layer formed in the p-type semiconductor substrate, a deep trench formed in the p-type semiconductor substrate so as to surround the first n-type collector diffusion layer, a p-type channel stopper layer formed beneath the deep trench, and an n-type diffusion layer formed between a sidewall of the deep trench and the first n-type collector diffusion layer.

Bipolar transistor with diffused layer between deep trench sidewall and collector diffused layer

A high-performance semiconductor apparatus which can be easily introduced into the MOS process, reduces the leakage current (electric field strength) between the emitter and the base, and is insusceptible to noise or surge voltage, and a manufacturing method of the semiconductor apparatus. The emitteris formed by performing the ion implantation twice by using the conductive film () as a mask. The second emitter area () is formed by ion implantation of a low impurity density impurity ion, and the first emitter area () is formed by ion implantation of a high impurity density impurity ion. As a result, the low impurity density second emitter area is formed in the circumference of the emitter, which lowers the electric field strength, and reduces the leakage current. Also the conductive film is connected with the emitter electrode (), which makes the apparatus insusceptible to noise.

Growing community of inventors

Fukui, Japan

Mitsuo Tanaka