Ajinomoto Co., Ltd.

Sumitomo Electric Industries, Limited

Daishin Industrial Co., Ltd.

Other

Tokyo Institute of Technology

Research Development Corporation of Japan

Mitsuo Takahashi

Tadakiyo Nakagawa

Munetaka Tokumasu

Takashi Kayahara

Hideaki Nishizawa

Shunji Takehana

Yasuharu Suematsu

Hiroshi Yamamoto

Masayuki Shigematsu

Hideki Matsumoto

Tsukuru Katsuyama

Toshihiko Ando

Toshihiko Yoshimura

Manabu Kitazawa

Masayuki Sugiki

Naoyuki Fukuchi

Kenji Hiratsuka

Kazuyuki Sagi

Kaoru Yoshida

Masaru Takayanagi

Masataka Shoji

Yoichiro Shima

Nobuyuki Ikoma

Yumiko Fukuda

Kuniya Sakurai

Yuki Kajigaya

Haruko Hirashima

Akiko Oonuki

Minoru Yamakado

Kazumi Tashiro

Kazutaka Ishida

Shigenori Takagishi

Yasushi Noguchi

Akira Ishida

Takeshi Oakamura

Fumihiko Takatsuki

Qingwei Zhang

Kazuaki Otomi

Tetsuya Sugimoto

Yasuko Nogi

Akiko Kumagai

Masahiro Yamanashi

A method of evaluating fatty liver related disease includes (I) an obtaining step of obtaining amino acid concentration data on a concentration value of an amino acid in blood collected from a subject to be evaluated and (II) a concentration value criterion evaluating step of evaluating a state of a fatty liver related disease including at least one of fatty liver, NAFLD, and NASH in the subject, based on the amino acid concentration data of the subject obtained at the obtaining step.

Method of evaluating fatty liver related disease, fatty liver related disease-evaluating apparatus, fatty liver related disease-evaluating method, fatty liver related disease-evaluating program product, fatty liver related disease-evaluating system, information communication terminal apparatus, and method of searching for prophylactic/ameliorating substance for fatty liver related disease

In a hepatic disease-evaluating apparatus, an indicator calculating unit calculates an index indicating the degree of hepatic fibrosis from amino acid concentration data to be evaluated including amino acid concentration value, based on one or more indices of fractional expression having amino acid concentration as variable. A disease state evaluating unit evaluates the disease state of the hepatic disease to be evaluated, based on the index value.

Hepatic disease-evaluating apparatus, hepatic disease-evaluating method, hepatic disease-evaluating system, hepatic disease-evaluating program and recording medium

The present invention provides a novel compound having a kininogenase-inhibitory action and its pharmaceutical use. The compounds are represented by the formulas (A), (B), (C), (E) and (H): wherein each symbol is as defined in the specification, or a pharmaceutically acceptable salt thereof.

Aniline derivatives

A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing (Zn) atoms contained in p-type layers surrounding the active layer. One of protection layers is put between the active layer and the p-type cladding layer, while, the other of protection layers is disposed between the active layer and the p-type burying layer.

Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms

Benzamidine derivatives of the following formulae or analogs thereof, i.e., pharmaceutically acceptable salts thereof, are provided. These compounds or salts thereof have a blood-coagulation inhibiting effect based on an excellent effect of inhibiting the action of activated blood coagulation factor X, and they are useful as anticoagulants 

Benzamidine derivatives

The present invention is to provide a vertical cavity surface emitting laser diode (VCSEL) that has a functional distributed Bragg reflector (DBR) comprised of less number of pairs of reflective layers. The VCSEL of the invention include a lower DBR, an upper DBR and an active layer arranged between the upper and lower DBRs. The upper DBR is comprised of a plurality of pairs including GaAs layers and aluminum oxide layers, thus the GaAs layers and the aluminum oxide layers are alternately stacked to each other. Since the refractive index of the aluminum oxide (AlO) is 1.67 at 1.3 &#x3bc;m and that of the GaAs is 3.51, the difference of these refractive index becomes 1.85, which is far greater than the combination of the AlAs and the GaAs, thereby decreasing the number of pairs for the DBR.

Vertical cavity surface emitting laser diode having a high reflective distributed Bragg reflector

The present invention provides benzodiazepine derivatives of the following formula, analogs thereof and pharmaceutically acceptable salts thereof. The compounds of the present invention have an excellent effect of inhibiting activated blood-coagulation factor X. These compounds are usable as agents for treating various diseases concerned with the activated blood-coagulation factor X.

Benzodiazepine derivatives

Articles to be brazed are preheated to an increased temperature in a preheating process and the temperature of the articles to be brazed is measured. Conversion data obtained and stored for different combinations of articles to be brazed is referred to on the basis of the measured temperature and a time for which brazing filler metal supply nozzles are kept in a wait state is set on the basis of the conversion data to define the timing for supplying the brazing filler metal wires (S ). A heating burner moves forward and then a timer starts counting the time for which the nozzles are kept in the wait state (S ). When the nozzle wait timer has counted the set time and expired, the brazing filler metal supply nozzles move forward and supply the wires to braze the articles (S to ). In this way, the articles to be brazed, heated by the heating burner, are at an increased temperature suitable for brazing at the time when the brazing filler metal wires are supplied.

Brazing apparatus and brazing method in which the amount of heating is controlled on the basis of temperature of articles to be brazed

The semiconductor optical device is provided with an optical waveguide part and an optical amplification part respectively provided on the GaAs semiconductor substrate. The optical amplification part includes at least one semiconductor optical amplifier. The optical waveguide part includes optical elements including optical waveguides. The optical waveguides are optically connected to the semiconductor optical amplifier. The semiconductor optical amplifier is provided with an active layer including a Ga In N As semiconductor, a first conductive type clad layer and a second conductive type clad layer respectively with the active layer between them. The optical waveguides are respectively provided with a core semiconductor layer including at least either of a GaInNAs semiconductor or a GaAs semiconductor, a first clad semiconductor layer and a second clad semiconductor layer respectively with the core semiconductor layer between them.

Semiconductor optical device and method of manufacturing the same

A gas flow rate control device disposed between a gas burner and a combustible gas source and a burning-supporting gas source connected to the gas burner has gas flow rate setting means for setting a flow rate of the combustible gas to be supplied to the gas burner, gas ratio setting means for setting a gas ratio between the flow rate of the combustible gas and a flow rate of the burning-supporting gas to be supplied to the gas burner, a first control valve for controlling the amount of combustible gas supplied to the gas burner, a second control valve for controlling the amount of burning-supporting gas supplied to the gas burner, and control means for controlling the first and second control valves on the basis of the set flow rate of the combustible gas and the set gas ratio so that the amounts of the combustible gas and the burning-supporting gas supplied to the gas burner correspond to the flow rates set.

Gas flow rate control device and brazing device with flow rate of frist

Disclosed are a distributed Bragg reflector type semiconductor laser and a method of manufacturing such a laser a high yields, in which the upper surface of an active waveguide is covered by an external waveguide, the external waveguide at side portions thereof, the external waveguide is coupled with the edge surfaces of the active waveguide without any gap remaining, and the coupling ratio of the active waveguide and external waveguide is high.

Method of manufacturing a distributed brass reflector type semiconductor

Disclosed are a distributed Bragg reflector type semiconductor laser and a method of manufacturing such a laser a high yields, in which the upper surface of an active waveguide is covered by an external waveguide, the external waveguide is disposed on the same surface as the active waveguide at side portions thereof, the external waveguide is coupled with the edge surfaces of the active waveguide without any gap remaining, and the coupling ratio of the active waveguide and external waveguide is high.

Distributed bragg reflector type semiconductor laser

Growing community of inventors

Kawasaki, Japan

Mitsuo Takahashi