Hitachi, Ltd.

Jeol Ltd.

Other

Mitsuo Suga

Hidetoshi Nishiyama

Mari Nozoe

Yoichiro Neo

Ushio Kawabe

Kazumasa Takagi

Toshikazu Nishino

Haruhiro Hasegawa

Mitsuru Koizumi

Mutsuko Hatano

Masahiko Hiratani

Kazuo Saitoh

Tokuumi Fukazawa

Yoshinobu Tarutani

Hideaki Nakane

Tomohiro Mihira

Shinichiroh Saitoh

A specimen holder is offered which can reduce the amount of chemical sprayed over a specimen consisting of cultured cells. The specimen holder has an open specimen-holding surface. At least a part of the specimen-holding surface is formed by a film and a tapering portion formed around the film. The specimen can be cultured on the specimen-holding surface of the film. The presence of the tapering portion can reduce the amount of used reagent. The specimen can be irradiated via the film with a primary beam for observation or inspection of the specimen. Consequently, the specimen, such as cells, can be well observed or inspected in vivo while the specimen is being cultured. Especially, if an electron beam is used as the primary beam, the specimen can be well observed or inspected in vivo by SEM (scanning electron microscopy).

Specimen holder, specimen inspection apparatus, and specimen inspection method

A sample holder used in SEM (scanning electron microscopy) or TEM (transmission electron microscopy) permitting observation and inspection at higher resolution. The holder has a frame-like member provided with an opening that is covered with a film. The film has a first surface on which a sample is held. The thickness D of the film and the length L of the portion of the film providing a cover over the opening in the frame-like member satisfy a relationship given by L/D &#x3c;200,000.

Sample holder, method for observation and inspection, and apparatus for observation and inspection

An electron microscope method for inspecting a liquid specimen and a reagent solution therefor. A culture medium and biological cells are put in the sample holder. A plugging agent is mixed into the liquid sample. The cells can be irradiated with a primary beam via a film. An image of the cells or information about the cells is obtained by detecting a resulting secondary signal. If the film is destroyed, the plugging agent plugs up the damaged portion of the film. Consequently, liquid leakage can be minimized.

Inspection method and reagent solution

Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

Method of inspecting pattern and inspecting instrument

A charged-particle beam instrument is offered which can inspect side and rear surfaces of a sample. Two electron optical microscope columns are mounted in a vacuum chamber. Each of the microscope columns has an electron gun, a condenser lens system, a deflector, and a secondary electron detector. A sample stage assembly on which a sample is placed is mounted in the vacuum chamber. The stage assembly consists of a rotary stage, an X-stage, and a Y-stage. One of the microscope columns is placed in a position where the electron beam from the column can scan at least an upper part of a side surface of the sample. The other microscope column is placed in a position where the beam from the column can scan at least a lower part of the side surface of the sample.

Charged-particle beam instrument

A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.

Superconducting device

A superconductive element at least comprising first and second superconductive electrodes composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material put between the first and second superconductive electrodes and disposed in adjacent with the first and the second superconductive electrodes, in which the semiconductor film is formed with an oxide comprising rare earth elements other than Pr, Ba and Cu as the main ingredient element or an oxide comprising predetermined amount of rare earth elements other than Pr, predetermined amount of Pr, Ba and Cu as the main ingredient element. Extremely fine size is no more necessary to enable fabrication with the existent fine fabrication technic.

Growing community of inventors

Saitama, Japan

Mitsuo Suga