Hitachi, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Japan Display Inc.

Hitachi Displays, Ltd.

Hitachi Chemical Company, Ltd.

Mitsuo Nakatani

Keiichiro Ashizawa

Hiroaki Miwa

Takao Tanaka

Shinichi Kawabe

Sadafumi Hirai

Masahiro Ieda

Makoto Sasaki

Kazuyuki Ito

Hitoshi Yokono

Toshiyuki Koshita

Hideaki Yamamoto

Michio Tsukii

Eiji Matsuzaki

Haruo Matsumaru

Masaaki Okunaka

Akihiro Kenmotsu

Yoshifumi Yoritomi

Akira Sasano

Hitoshi Oka

Tokio Isogai

Kazuo Nate

Ryoji Oritsuki

Saburo Oikawa

Kazufumi Azuma

Kunihiko Watanabe

Satoru Todoroki

Takao Takano

Tetsuaki Suzuki

Hiroshi Kikuchi

Masahiro Tanaka

Mitsuaki Horiuchi

Tadashi Saitoh

Haruhiko Matsuyama

Yasushi Sano

Eisuke Nishitani

Hideki Kuriyama

Masaaki Maehara

Koichiro Mizukami

Masato Kikuchi

Sumiyuki Midorikawa

Hiroshi Sasaki

Takeshi Tanaka

Hideo Takahashi

Shigeru Kobayashi

Takeshi Endo

Ryoichi Sudo

Masahiko Suzuki

Susumu Tsuzuku

Takashi Kuroki

Tomoaki Takahashi

Mitsuo Yamazaki

Keiichirou Ashizawa

Kenji Tochigi

Satoru Suzuki

Susumu Niwa

Hideki Sakurai

Yoshiyuki Horibe

Yuuichi Hashimoto

Kunihiro Matsukuma

Tsuzuku

Sakari Kaneku

Masahiro Ukisu

Toshiaki Syozi

Tomoyuki Ariyoshi

A liquid crystal display device with a pair of substrates which are arranged to face each other with liquid crystal therebetween, columnar spacers having the substantially equal height formed on a liquid-crystal-side surface of one substrate, and the columnar spacers include the columnar spacer which is contact with a liquid-crystal-side surface of another substrate and the columnar spacer which is not contact with the liquid-crystal-side surface of another substrate.

Liquid crystal display device

A liquid crystal display device is provided that includes a pair of substrates which are arranged to face each other with a liquid crystal therebetween, and columnar spacers that are substantially equal in height formed on a liquid-crystal-side surface of one of the pair of substrates, where the columnar spacers include a first columnar spacer which is in contact with a liquid-crystal-side surface of the other substrate of the pair of substrates and a second columnar spacer which is not contact with the liquid-crystal-side surface of that other substrate.

A method of manufacturing an LCD device which includes a gate line having an effective display area which includes an aluminum alloy layer and an aluminum oxide layer. The gate line also includes a gate terminal portion which is made up of the same aluminum alloy layer with a molybdenum alloy layer formed thereon. To form this structure, an insulating substrate of the LCD device, with the laminated structure of the aluminum alloy layer and the molybdenum layer, is immersed in an electrolytic solution. During the immersion, the molybdenum layer is etched off the aluminum alloy in the effective displaying area, while the etching is prevented in the gate terminal area by a protective layer. Following this, the aluminum oxide layer is formed over the aluminum alloy in the effected display area while the device is still immersed in the electrolytic solution.

Liquid crystal display device, manufacturing method thereof, and fabrication apparatus therefor

A liquid crystal display device is provided with a pair of substrates which are arranged to face each other in an opposed manner and a liquid crystal layer which is sandwiched between main surfaces of a pair of substrates. On the main surface of one of the pair of substrates which faces the liquid crystal layer, pixel regions including switching elements, pixel electrodes which are connected to the switching elements and a protective film which is disposed at liquid crystal layer side of the switching elements are formed. In such a liquid crystal device, the protective film is formed by laminating the plurality of material layers which include at least a first material layer and a second material layer which is arranged closer to the liquid crystal layer side than the first material layer. Further, the second material layer exhibits resistivity which is lower than resistivity of the first material layer and higher than resistivity of silicon or semiconductor layers which constitute channels of the switching elements. Due to such a constitution, the image retention which is generated on a display screen of the liquid crystal display device can be reduced.

Liquid crystal display device and manufacturing method thereof

In a liquid crystal display device having a thin film transistor in a pixel region thereof, the present invention arranges a semiconductor layer being located under a source electrode in the thin film transistor within a contour of a gate line (or a gate electrode of the thin film transistor) so as to suppress a photo conductive current in the semiconductor layer, or to prevent the source electrode from being broken at a position where the source electrode gets over the semiconductor layer.

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al&mdash;Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal line or video signal line

A thin film transistor structure for use in driving liquid crystal display elements has a semiconductor active layer, a control electrode layer underlying the active layer with an insulating layer interposed therebetween and first and second main electrode layers formed on or above the active layer in a spaced relation with each other to define a channel in the active layer in cooperation with the control electrode layer between the main electrode layers. The active layer has a first peripheral edge portion generally perpendicular to the direction of the channel and a second peripheral edge portion generally not perpendicular to the direction of the channel. The first and/or second main electrode layer extends over the first and/or second peripheral edge portion of the active layer such that at least a part of the first peripheral edge portion and/or at least part of the second peripheral edge portion of the active layer has its side face directly covered with the main electrode layer.

Thin film transistor structure having increased on-current

Growing community of inventors

Mobara, Japan

Mitsuo Nakatani