Sharp Kabushiki Kaisha Corporation

Sharp Kabushiki Kaishi

Mitsuo Matsunami

Toshiaki Miyajima

Hideyuki Tsuji

Minoru Yoshioka

A large scale semiconductor apparatus is provided which includes at least one semiconductor chip having electrodes. The semiconductor chip is bonded on an electrically insulating circuit substrate on which electrically conductive interconnection films are separately formed, and a plurality of through holes are formed in the semiconductor chip so as to pierce the semiconductor chip in the direction of the thickness thereof. Electrically conductive bodies are formed in the through holes, respectively, wherein each of the conductive bodies electrically connects a predetermined electrode of the semiconductor chip to a predetermined interconnection film formed on the circuit substrate.

Large scale high density semiconductor apparatus

vertical power MOSFET which comprises a semiconductive substrate of a first conductivity type serving as drain, an impurity region of a second conductivity type on a part of the surface of the semiconductive substrate, an impurity region of a first conductivity type formed on a part of the surface of the second conductivity type impurity region and serving as source, and a surface portion of a second conductivity type semiconductive substrate between source and drain serving as a channel portion with a gate electrode thereon through an insulating film, so that voltage is applied to the gate electrode to control channel current between source and drain, wherein the first conductivity type semiconductive substrate comprises a low resistivity layer and a high resistivity layer epitaxially formed on the low resistivity layer, and at an interface between the low resistivity layer and the high resistivity layer is provided a convexed portion which projects at least to the high resistivity layer side.

Growing community of inventors

Tenri, Japan

Mitsuo Matsunami