Semiconductor Energy Laboratory Co., Ltd.

Mitsuo Mashiyama

Kenichi Okazaki

Masahiro Watanabe

Shunpei Yamazaki

Yoshiaki Oikawa

Shingo Eguchi

Masataka Nakada

Hironobu Shoji

Motoki Nakashima

Masatoshi Kataniwa

Satoshi Seo

Takashi Shimazu

Tetsunori Maruyama

Yuki Imoto

Takuya Handa

Hitomi Sato

Hideyuki Kishida

Hajime Tokunaga

Yasuharu Hosaka

There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Sputtering target, method for manufacturing sputtering target, and method for forming thin film

A circuit capable of high-speed operation and a pixel are integrally formed over the same substrate. A first metal oxide film, a first metal film, and an island-shaped first resist mask are formed over a first insulating layer. An island-shaped first metal layer and an island-shaped first oxide semiconductor layer are formed and a part of a top surface of the first insulating layer is exposed; then, the first resist mask is removed. A second metal oxide film, a second metal film, and an island-shaped second resist mask are formed over the first metal layer and the first insulating layer. An island-shaped second metal layer and an island-shaped second oxide semiconductor layer are formed; then, the second resist mask is removed. The first metal layer and the second metal layer are removed.

Display device and manufacturing method of display device

The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device

Semiconductor device comprising oxide semiconductor film

An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

Light emitting device and electronic device

Flexible light emitting device comprising a polyimide resin

Light emitting device sealed in a fibrous body to improve manufacturability and electronic device including the light emitting device

Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

Semiconductor device comprising an oxide layer and an oxide semiconductor layer

Light emitting device that is highly reliable, thin and is not damaged by external local pressure and electronic device

Light emitting device and electronic device having an embedded pixel electrode

Growing community of inventors

Oyama, Japan

Mitsuo Mashiyama