Renesas Electronics Corporation

Mitsuo Maeda

Youichi Yamamoto

Misato Sakamoto

Takashi Kyouno

Chikara Yamamoto

Terukazu Motosawa

Yoshitake Katou

Hiroshi Itou

With a stage kept in an as-heated state, a semiconductor wafer is placed over the stage. Then, with the elapse of a first time, a controller causes a pressure inside a vacuum chamber to rise to a second pressure higher than a first pressure (step S). After the semiconductor wafer is placed over the stage, a pressure difference between a pressure inside the vacuum chamber and a pressure inside an adsorption port is set to a minimum value at which the semiconductor wafer is not allowed to slide over protrusions. Further, in step Sas well, the pressure difference is kept at the minimum value at which the semiconductor wafer is not allowed to slide over the protrusions.

Semiconductor device manufacturing method

Growing community of inventors

Yamagata, Japan

Mitsuo Maeda