Hitachi, Ltd.

Nippon Hoso' Kyokai

Mitsuo Kosugi

Kazutaka Tsuji

Tadaaki Hirai

Yukio Takasaki

Junichi Yamazaki

Keiichi Shidara

Tatsuo Makishima

Takashi Yamashita

Sachio Ishioka

Kenkichi Tanioka

Kenji Sameshima

Tatsuro Kawamura

Yasuhiko Nonaka

Naohiro Goto

Eisuke Inoue

Kazuhisa Taketoshi

Tsuyoshi Uda

Hirofumi Ogawa

Masaaki Aiba

Eikyuu Hiruma

Shiro Suzuki

Hirokazu Matsubara

Yochizumi Ikeda

Yasuharu Shimomoto

Eikyu Hiruma

Yoshizumi Ikeda

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Photoconductive imaging apparatus

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Photoconductive device and method of operating the same

A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

Target of image pickup tube having an amorphous semiconductor laminate

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Tokyo, Japan

Mitsuo Kosugi