Kabushiki Kaisha Toshiba

Mitsuo Kasori

Fumio Ueno

Akihiro Horiguchi

Hiroyasu Sumino

Yoshiko Goto

Katsuyoshi Oh-Ishi

Norio Takami

Haruchika Ishii

Tomokazu Morita

Akihiko Tsuge

Hiroshi Komorita

Kazuo Kimura

Kazuo Shinozaki

Jun Monma

Hiroshi Endo

Hidesato Saruwatari

Takahiro Hirai

Mitsuyoshi Endo

Nobuo Iwase

Noboru Sato

Motomasa Imai

Kiyoshi Iyogi

Naoki Shutoh

Kazuo Anzai

Masaru Hayashi

Naoki Shuto

Kazutaka Saitoh

Yoshiko Sato

An electric cell comprising a positive electrode, a negative electrode containing aluminum or aluminum alloy, and an electrolyte arranged between the positive electrode and the negative electrode, wherein the electrolyte includes: at least one ion selected from a group of a sulfate ion (SO) and a nitrate ion (NO), the concentration of the ion being in the range of 0.2 to 16 M/L; and an additive selected from a group of an organic acid, a salt of the organic acid, a hydrate of the organic acid, an ester of the organic acid, an ion of the organic acid, and derivatives thereof.

Electric cell

Disclosed is an aluminum negative electrode battery comprising a closed space provided by at least one member including a hydrogen gas permeating member that contains an organic material having a He gas permeability of 2&#xd7;10(cm(STP)cm/sec&#xb7;cm&#xb7;cmHg) or more at 30&#xb0; C., and a power generating element including an electrolyte, a positive electrode and a negative electrode containing at least one of aluminum and aluminum alloy, and the power generating element provided in the closed space.

Aluminum negative electrode battery

An electric cell using aluminum in a negative electrode has a positive electrode, the negative electrode containing aluminum or aluminum alloy, and an electrolyte arranged between the positive electrode and the negative electrode. The electrolyte includes: at least one ion selected from a group of a sulfate ion (SO ) and a nitrate ion (NO ); and an additive. The additive is selected from an organic acid, a salt of the organic acid, an hydrate of the organic acid, an ester of the organic acid, an ion of the organic acid, and derivatives thereof. Thus, the electric cell of the present invention using aluminum in a negative electrode allows the improvements in the voltage and the capacity of the cell as the generation of gas depending on the self-discharge can be prevented.

Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.

Silicon nitride ceramic circuit substrate and semiconductor device using

Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.

Silicon nitride circuit substrate and semiconductor device containing

Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.

High thermal conductivity silicon nitride circuit substrate and

A circuit board having at least one insulator layer and at least one conductor layer which includes at least one of the whole insulator layers in a sintered body containing .beta.-Si.sub.3 N.sub.4 as a main component and at least one element selected from the group consisting of a rare earth element and an alkaline earth element, and at least one of the whole conductor layers contains at least one element selected from the group of IVb, Vb and VIb group of the periodic table, and at least one element selected from the group of a rare earth element and an alkaline earth element, and a Si element.

Circuit board with high strength and high reliability and process for

Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

Sintered aluminum nitride and circuit substrate using sintered aluminum

Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.

Circuit substrate including insulating layer of aluminum nitride and

Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.

Method for manufacturing an aluminum nitride sintered body

Aluminum nitride sintered body, method for manufacturing the same, and

Disclosed is a method of manufacturing a circuit board comprising an insulating substrate and a conductor pattern of a low resistivity which can be prevented from being peeled off the substrate by a thermal stress. The method comprises the step of forming an insulating layer on an insulating substrate, the insulating layer being provided with a groove having a depth of at least 20 .mu.m and shaped like a conductor pattern which is to be formed later, the step of filling the groove of the insulating layer with a paste composition consisting of a powdery material capable of forming an electrically conductive metal, a fine particles having a thermal expansion coefficient smaller than that of the electrically conductive metal, the fine particles being used in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal, and an organic binder, and the step of baking the paste composition so as to form a conductor pattern on the insulating substrate, the conductor pattern containing as a main component the electrically conductive metal and the fine particles having a thermal expansion coefficient smaller than that of the metal, the fine particles being dispersed in the electrically conductive metal in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal.

Method of manufacturing circuit board and circuit board itself

In an aluminum nitride structure, a plurality of aluminum nitride regions having different purities are integrally formed to satisfy a predetermined positional relationship, and neighboring regions are brought into direct contact with each other to form an abrupt junction therebetween. Therefore, the aluminum nitride structure has anisotropy in physical properties such as a thermal conductivity, a light transmittance, and a strength.

Method of manufacturing aluminum nitride structure with anisotropic

According to this invention, there is provided a method of manufacturing a highly reliable circuit board in which a copper member is strongly, directly bonded to a substrate made of an aluminum nitride sintered body, thereby obtaining high peel strength. The method of manufacturing the circuit board includes the steps of bringing a copper member containing 100 to 1,000 ppm of oxygen into contact with an oxide layer having a thickness of 0.1 to 5 .mu.m formed on a surface of a substrate made of an aluminum nitride sintered body, and heating the substrate in an inert gas atmosphere containing 1 to 100 ppm of oxygen at a temperature not more than a temperature corresponding to a liquidus including a pure copper melting point of a hypoeutectic region of a two-component phase diagram of Cu-Cu.sub.2 O and not less than a temperature corresponding to a eutectic line obtained by connecting a line corresponding to copper and a line corresponding to a cuporus oxide composition, and directly bonding the copper member to the substrate.

Method of manufacturing circuit board

An aluminum nitride structure is prepared by placing an oxygen-trapping substance at at least one position on an aluminum nitride substrate having a first concentration of solution oxygen, and heating the resultant structure in a non-oxidizing atmosphere to locally reduce the first concentration of solution oxygen in said aluminum nitride substrate under said oxygen-trapping substance to a second concentration of solution oxygen by trapping the solution oxygen in the oxygen-trapping substance, thereby forming an aluminum nitride structure in which at least one region of the aluminum nitride structure corresponding to the position of said oxygen-trapping substance, which position has said second oxygen concentration, is integrally formed with aluminum nitride regions having said first concentration of solution oxygen. The aluminum nitride structure of the present invention exhibits anisotropic physical properties.

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Kawasaki, Japan

Mitsuo Kasori