Tokyo Ohka Kogyo Co., Ltd.

Mitsuo Hagihara

Toshiaki Tachi

Kenji Maruyama

Kazufumi Sato

Takahiro Asai

Toshimasa Nakayama

Hidekatsu Kohara

Ken Miyagi

Kousuke Doi

Kazuyuki Nitta

Takayoshi Mori

Masahito Yahagi

Daisuke Kawana

Tomoya Kumagai

Ryoji Watanabe

Taku Nakao

Kaoru Ishikawa

Kenta Suzuki

Akira Katano

Tetsuya Nakajima

A nonaqueous secondary battery which can be made thinner without deterioration of battery performance, and a method for manufacturing the battery. The nonaqueous secondary battery includes a positive electrode and a negative electrode which are substantially arranged in the same plane so that respective end surfaces face each other at a distance; a substrate by which the positive electrode and the negative electrode are affixed and supported; a cover member having gas barrier properties, which defines an airtight chamber together with the substrate, in the chamber in which the positive electrode and the negative electrode are contained; and an electrolyte which is contained in the airtight chamber so as to be positioned at least between the facing end surfaces of the positive electrode and the negative electrode, and which relates to the battery reaction between the positive electrode and the negative electrode.

Nonaqueous secondary battery and method for manufacturing same

A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: 

Resist pattern forming method and developer for lithography

A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.

Positive resist composition and method for forming resist pattern

A positive resist composition includes a resin (A) that increases alkali solubility due to action of an acid, wherein the resin comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene, and a second structural unit (a2) derived from a (meth)acrylate with an alcoholic hydroxyl group, and a weight average molecular weight of the copolymer is within a range from 2000 to 8500, and 10 mol % to 25 mol % of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups, an acid generator (B) that generates an acid on exposure to light, and polypropylene glycol (C).

Positive resist composition and method of forming resist pattern

(i) As a primary reaction, m-cresol is allowed to react with propionaldehyde in the presence of an acid catalyst and thereby yields a polymer having a weight average molecular weight Mw of 200 to 500 and a molecular weight distribution Mw/Mn of 1.7 or less, and (ii) as a secondary reaction, the polymer is allowed to react with 3,4-xylenol and formaldehyde and thereby yields a novolak resin having an Mw of 1000 to 20000. By adding a specific photosensitizer, the novolak resin yields a positive photoresist composition.

Novolak resin, production process thereof and positive photoresist composition using the novolak resin

Positive photoresist composition

Polyphenol compound, quinonediazide ester and positive photoresist

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Kawasaki, Japan

Mitsuo Hagihara