Fujitsu Corporation

Mitsunori Yokoyama

Hitoshi Tanaka

Hironori Nishino

Yusuke Matsukura

Jun Wada

The optical semiconductor device comprises a first contact layer formed on a substrate ; a first quantum well layer formed on the first contact layer; a second contact layer formed on the first quantum well layer; an optical coupling layer formed on the second contact layer; and a first conductor plug extended from an upper surface of the optical coupling layer and arriving at the first contact layer.

Optical semiconductor device and method for fabricating the same

A compound semiconductor device includes a low resistance source and drain region covered by a protective layer of a compound semiconductor device carrying thereon a source electrode or a drain electrode. Further, a low resistance source and drain region formed by a regrowth process of a compound semiconductor material is disclosed.

Growing community of inventors

Kawasaki, Japan

Mitsunori Yokoyama