Hitachi-Kokusai Electric Inc.

Kokusai Electric Corporation

Mitsunori Takeshita

Kazuya Nabeta

Naoki Ukae

Shinya Morita

Shuhei Saido

Hidenari Yoshida

Yusaku Okajima

Masanori Nakayama

Tadashi Terasaki

Katsunori Funaki

Akihiro Sato

Toshimitsu Miyata

Mitsuhiro Hirano

Tomoyuki Matsuda

Koji Shibata

Return nozzle

A stable and highly reliable device for detecting damage or contact failures of respective parts is provided. The device includes a processing chamber for processing a substrate; a heater for heating the substrate; a substrate support accommodating the heater and installed inside the processing chamber; a shaft for supporting the substrate support; a wire inserted through the shaft; a supporting unit for holding the wire; and a temperature detector connected to the supporting unit.

Substrate processing apparatus and method of manufacturing semiconductor device

The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamberand a transfer chamberrespectively provided in order from the rear side within a case; and a processing chamberprovided above the load lock chamberfor processing wafers. An opening sectionA, and an opening and closing meansA for opening and closing the opening sectionA are respectively provided in a location at the rear side of the transfer chamberwhere the load lock chamberis not arranged.

Substrate processing apparatus and manufacturing method for a semiconductor device

A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.

Growing community of inventors

Toyama, Japan

Mitsunori Takeshita